公开(公告)号：AU3509997A

公开(公告)日：1998-01-21

申请号：AU3509997

申请日：1997-06-27

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN P ,  DEMOS ALEX T

IPC: G02F1/1343 ,  C03C17/23 ,  C03C17/34 ,  C04B41/53 ,  C04B41/91 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L31/18 ,  H01L21/321

Abstract: A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the low pressure plasma reactor; a step of striking a plasma from the etchant gas in the low pressure plasma reactor; and a step of etching the ITO layer with the plasma.

公开(公告)号：AT292200T

公开(公告)日：2005-04-15

申请号：AT97953209

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  MCMILLIN BRIAN ,  DEMOS ALEX T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768 ,  C23C16/50

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.