公开(公告)号：CA2233612A1

公开(公告)日：1997-04-03

申请号：CA2233612

申请日：1996-09-30

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  BARNES MICHAEL S

IPC: B65G49/06 ,  B25J15/06 ,  H01L21/683 ,  C23C14/50

Abstract: A dielectric workpiece (32) is clamped to a holder (30) in a vacuum plasma processor chamber (10) by applying the plasma to a surface of the workpiece exposed to the plasma simultaneously with applying a relatively high voltage to an electrode on the holder. The electrode is in close proximity to a portion of the workpiece not exposed to the plasma so (A) the electrode is at a voltage substantially different from the plasma, (B) electrostatic charge is applied to the exposed surface by the plasma, and (C) an electrical conducting path is provided via the plasma from the electrostatic charge to a terminal at a potential substantially different from the voltage applied to the electrode. Sufficient electrostatic clamping force is applied through the thickness of the workpiece by a voltage difference between the DC voltage applied to a single electrode and charge applied by the plasma to the exposed face to hold the substrate on the holder.

公开(公告)号：AT292200T

公开(公告)日：2005-04-15

申请号：AT97953209

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  MCMILLIN BRIAN ,  DEMOS ALEX T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768 ,  C23C16/50

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：AT251800T

公开(公告)日：2003-10-15

申请号：AT96944410

申请日：1996-12-18

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  GRIFFIN CHRISTOPHER

IPC: H01L21/677 ,  G03F7/20 ,  H01L21/687 ,  H01L21/00

Abstract: A lift pin arrangement for use in semiconductor processing apparatus wherein the lift pins are of a shape memory alloy. The lift pins exhibit superelasticity and/or shape memory effects which allows the lift pins to withstand substantial bending forces without permanent deformation thereof, and in the case where the lift pins become deformed it is possible to restraighten the lift pins simply by heating the lift pins to an appropriate temperature.

公开(公告)号：AU7379796A

公开(公告)日：1997-04-17

申请号：AU7379796

申请日：1996-09-30

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  BARNES MICHAEL S

IPC: B65G49/06 ,  B25J15/06 ,  H01L21/683 ,  H01L21/68

Abstract: A dielectric workpiece is clamped to a holder in a vacuum plasma processor chamber by applying the plasma to a surface of the workpiece exposed to the plasma simultaneously with applying a relatively high voltage to an electrode on the holder. The electrode is in close proximity to a portion of the workpiece not exposed to the plasma so (1) the electrode is at a voltage substantially different from the plasma, (2) electrostatic charge is applied to the exposed surface by the plasma, and (3) an electrical conducting path is provided via the plasma from the electrostatic charge to a terminal at a potential substantially different from the voltage applied to the electrode. Sufficient electrostatic clamping force is applied through the thickness of the workpiece by a voltage difference between the DC voltage applied to a single electrode and charge applied by the plasma to the exposed face to hold the substrate on the holder.