公开(公告)号：SG11201401750SA

公开(公告)日：2014-09-26

申请号：SG11201401750S

申请日：2012-11-12

Applicant: LAM RES CORP

Inventor： JACOBS KANARIK KEREN ,  LEE WONCHUL ,  FU QUIAN ,  EPPLER AARON SCOTT ,  GUHA JOYDEEP

IPC: C23C16/455

Abstract: A method for processing substrate in a processing chamber that has at least one plasma generating source and a gas source for providing a process gas into the chamber is provided. The method includes exciting the plasma generating source with an RF signal having an RF frequency. The method also includes pulsing the RF signal using at least one of amplitude, phase, and frequency of the RF signal having a first value during first portion of an RF pulsing period and a second value during second portion of RF pulsing period, which is associated with first source pulsing frequency. The method further includes pulsing the gas source such that the process gas flows into the chamber at a first rate during a first portion of a gas pulsing period and a second rate during a second portion of the gas pulsing period, which is associated with the gas pulsing frequency.