公开(公告)号：SG10201608573XA

公开(公告)日：2016-12-29

申请号：SG10201608573X

申请日：2013-04-02

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  MARKS JEFFREY ,  JINNAI BUTSURIN

Abstract: A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber.

公开(公告)号：SG11201406233VA

公开(公告)日：2014-10-30

申请号：SG11201406233V

申请日：2013-04-02

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  MARKS JEFFREY ,  JINNAI BUTSURIN

IPC: H01L21/3065 ,  H01L21/8247 ,  H01L27/115

Abstract: A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber.

公开(公告)号：SG10201406081QA

公开(公告)日：2015-04-29

申请号：SG10201406081Q

申请日：2014-09-25

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  REDDY SIRISH K ,  CHATTOPADHYAY KAUSHIK ,  MOUNTSIER THOMAS W ,  EPPLER AARON ,  LILL THORSTEN ,  VAHEDI VAHID ,  SINGH HARMEET

Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.

公开(公告)号：SG10201403999YA

公开(公告)日：2015-02-27

申请号：SG10201403999Y

申请日：2014-07-10

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP

Abstract: The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by a grid assembly. Plasma is generated in the upper sub-chamber, and the substrate is positioned in the lower sub-chamber. The grid assembly includes at least two grids, each of which is negatively biased, and each of which includes perforations which allow certain species to pass through. The uppermost grid is negatively biased in order to repel electrons. The lowermost grid is biased further negative (compared to the uppermost grid) in order to accelerate positive ions from the upper to the lower sub-chamber. Etching gas is supplied directly to the lower sub-chamber. The etching gas and ions react with the surface of the substrate to etch the substrate as desired.

公开(公告)号：SG10201405532WA

公开(公告)日：2015-04-29

申请号：SG10201405532W

申请日：2014-09-05

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  KABANSKY ALEXANDER ,  GUHA JOYDEEP

Abstract: A solution for processing devices is provided, comprising an activator comprising at least one of pyridine, pyrole, pyrrolidine, pyrimidine, N,N-dimethylformamide, tetraethylamine chloride, 4 pyridinethiol, or other organic compounds with a single N with a lone pair electron activator and an etchant comprising at least one of thionly chloride, Cl2, Br2, I2, SOF2, SOF4, SO2Cl2, SOBr2, S2O6F2, HSO3F, or C2Cl4O2.

公开(公告)号：SG10201402625UA

公开(公告)日：2014-12-30

申请号：SG10201402625U

申请日：2014-05-26

Applicant: LAM RES CORP

Inventor： CHANDRASHEKAR ANAND ,  GUHA JOYDEEP ,  HAMAYUN RAASHINA ,  XIANG HUA

Abstract: METHODS AND APPARATUSES FOR VOID-FREE TUNGSTEN FILL IN THREE-DIMENSIONAL SEMICONDUCTOR Disclosed herein are methods of filling a 3-D structure of a semiconductor substrate with a tungsten-containing material. The 3-D structure may include sidewalls, a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions. The methods may include depositing a first layer of the tungsten-containing material within the 3-D structure such that the first layer partially fills a plurality of interior regions of the 3-D structure, etching vertically and horizontally after depositing the first layer, and depositing a second layer of the tungsten-containing material within the 3-D structure after the vertical and horizontal etching such that the second layer fills at least a portion of the interior regions left unfilled by the first layer. Also disclosed herein are apparatuses for filling a 3-D structure of a semiconductor substrate with a tungsten- containing material having a controller with instructions for etching vertically and horizontally. FIG. 4C 52

公开(公告)号：SG11201401750SA

公开(公告)日：2014-09-26

申请号：SG11201401750S

申请日：2012-11-12

Applicant: LAM RES CORP

Inventor： JACOBS KANARIK KEREN ,  LEE WONCHUL ,  FU QUIAN ,  EPPLER AARON SCOTT ,  GUHA JOYDEEP

IPC: C23C16/455

Abstract: A method for processing substrate in a processing chamber that has at least one plasma generating source and a gas source for providing a process gas into the chamber is provided. The method includes exciting the plasma generating source with an RF signal having an RF frequency. The method also includes pulsing the RF signal using at least one of amplitude, phase, and frequency of the RF signal having a first value during first portion of an RF pulsing period and a second value during second portion of RF pulsing period, which is associated with first source pulsing frequency. The method further includes pulsing the gas source such that the process gas flows into the chamber at a first rate during a first portion of a gas pulsing period and a second rate during a second portion of the gas pulsing period, which is associated with the gas pulsing frequency.