ELECTROLESS DEPOSITION OF COBALT ALLOYS
    1.
    发明申请
    ELECTROLESS DEPOSITION OF COBALT ALLOYS 审中-公开
    钴合金的化学沉积

    公开(公告)号:WO2008085256A3

    公开(公告)日:2008-12-24

    申请号:PCT/US2007025460

    申请日:2007-12-12

    CPC classification number: C23C18/34

    Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

    Abstract translation: 用于在铜表面上无电沉积钴合金层的系统和方法包括以低pH为特征的溶液。 该溶液可以包括例如钴(II)盐,包含至少两个胺基的络合剂,构造成将pH调节到低于7.0的pH调节剂和还原剂。 在一些实施例中,钴合金被配置为促进铜表面与集成电路中的电介质之间的结合和铜扩散特性。

    PLATING SOLUTION FOR ELECTROLESS DEPOSITION OF COPPER
    2.
    发明公开
    PLATING SOLUTION FOR ELECTROLESS DEPOSITION OF COPPER 有权
    BESCHICHTUNGSLÖSUNGFÜRSTROMLOSE VERKUPFERUNG

    公开(公告)号:EP2016207A4

    公开(公告)日:2015-05-27

    申请号:EP07762101

    申请日:2007-05-10

    Applicant: LAM RES CORP

    CPC classification number: C23C18/38 C23C18/48

    Abstract: An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a triamine based complexing agent, and an acidic pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

    Abstract translation: 本文公开了一种化学镀铜溶液。 该溶液包括含量的铜盐组分,含水钴盐组分,三胺络合剂和酸性pH调节物质,其量足以使化学镀铜溶液呈酸性。 还提供了一种制备无电解铜溶液的方法。

    ELECTROLESS DEPOSITION OF COBALT ALLOYS

    公开(公告)号:SG177913A1

    公开(公告)日:2012-02-28

    申请号:SG2011095106

    申请日:2007-12-12

    Applicant: LAM RES CORP

    Abstract: ELECTROLESS DEPOSITION OF COBALT ALLOYSSystems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.Fig. 2

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