公开(公告)号：EP2036098A4

公开(公告)日：2012-03-21

申请号：EP07784146

申请日：2007-05-25

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  THIE WILLIAM ,  VASKELIS ALGIRDAS ,  NORKUS EUGENIJUS ,  JACIAUSKIENE JANE ,  JAGMINIENE ALDONA

IPC: H01B13/00 ,  C23C18/40 ,  C23C18/50

CPC classification number: C23C18/40 ,  C23C18/50

Abstract: An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a polyamine-based complexing agent, a chemical brightener component, a halide component, and a pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

公开(公告)号：WO2007038256A3

公开(公告)日：2007-06-21

申请号：PCT/US2006036959

申请日：2006-09-22

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  THIE WILLIAM ,  DORDI YEZDI ,  BAILEY ANDREW D III

Inventor： YOON HYUNGSUK ALEXANDER ,  THIE WILLIAM ,  DORDI YEZDI ,  BAILEY ANDREW D III

IPC: B23K10/00

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

Abstract: An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

Abstract translation: 公开了一种产生等离子体以从衬底去除金属氧化物的设备。 该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。 该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽， 腔在一端具有出口以提供等离子体以去除金属氧化物。

公开(公告)号：WO2007123677A3

公开(公告)日：2008-11-20

申请号：PCT/US2007007903

申请日：2007-03-27

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

IPC: B23H3/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：WO2007028156A3

公开(公告)日：2009-05-22

申请号：PCT/US2006034555

申请日：2006-08-31

Applicant: LAM RES CORP ,  LEE ALAN ,  BALLEY ANDREW III ,  THIE WILLIAM ,  KIM YUNSANG ,  DORDI YEZDI

Inventor： LEE ALAN ,  BALLEY ANDREW III ,  THIE WILLIAM ,  KIM YUNSANG ,  DORDI YEZDI

IPC: B05D5/12 ,  B05D1/18

CPC classification number: H05K3/184 ,  C23C18/1605 ,  C23C18/1642 ,  C23C18/1669 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/38 ,  C23C18/40 ,  H05K3/064 ,  H05K2203/0571 ,  H05K2203/072 ,  H05K2203/087

Abstract: A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.

Abstract translation: 一种在基板上形成铜的方法，包括将铜源溶液输入到混合器中，将还原溶液输入到混合器中，将铜源溶液和还原溶液混合以形成pH大于约6.5的电镀溶液， 电镀溶液到基板上，所述基板包括催化层，其中将所述电镀液施加到所述基板上包括形成催化剂层，将所述催化剂层保持在受控环境中并在所述催化层上形成铜。 还公开了一种用于形成铜结构的系统。

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2008002977A3

公开(公告)日：2008-03-06

申请号：PCT/US2007072241

申请日：2007-06-27

Applicant: LAM RES CORP ,  DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

Inventor： DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

IPC: C23C26/00 ,  B05D1/18

CPC classification number: H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract translation: 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：JP2006009154A

公开(公告)日：2006-01-12

申请号：JP2005186284

申请日：2005-06-27

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C

IPC: C25D7/12 ,  C25D5/04 ,  C25D17/00 ,  C25D17/12 ,  C25D17/14

CPC classification number: C25D5/026 ,  C25D5/02 ,  C25D5/06 ,  C25D17/14

Abstract: PROBLEM TO BE SOLVED: To provide an electroplating head giving a uniform current distribution to the whole of a wafer and giving a uniform plating thickness, and to provide a method for operating the same. SOLUTION: An electroplating head 100 is disposed in the upper part of a wafer 307. The head includes a main chamber 105, anode chambers 105A, 105B, anodes 115A, 115B arranged at the anode chambers, a fluid entrance 111, a fluid exit 112, and a porous resistive material 119 disposed at the fluid exit. The main chamber is separated from the anode chambers by membranes 109A, 109B penetrating anions. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种给整个晶片提供均匀电流分布并给出均匀电镀厚度的电镀头，并提供一种操作该电镀头的方法。 解决方案：电镀头100设置在晶片307的上部。头包括主室105，布置在阳极室的阳极室105A，105B，阳极115A，115B，流体入口111， 流体出口112和布置在流体出口处的多孔电阻材料119。 通过穿透阴离子的膜109A，109B将主室与阳极室分离。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2008027215A3

公开(公告)日：2008-11-13

申请号：PCT/US2007018254

申请日：2007-08-17

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

IPC: C23C16/00

CPC classification number: H01L21/67207 ,  C23C16/0227 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868

Abstract: The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。 在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。 腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。 腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

公开(公告)号：WO2008027205A3

公开(公告)日：2008-04-24

申请号：PCT/US2007018212

申请日：2007-08-15

Applicant: LAM RES CORP ,  NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

Inventor： NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

IPC: C23F11/00 ,  H01L21/302 ,  H01L21/312

CPC classification number: C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

Abstract: The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

Abstract translation: 这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。 电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。 功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。 官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。 该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。