公开(公告)号：SG10201507848XA

公开(公告)日：2016-04-28

申请号：SG10201507848X

申请日：2015-09-21

Applicant: LAM RES CORP

Inventor： SIMS JAMES S ,  KELCHNER KATHRYN M ,  HENRI JON ,  HAUSMANN DENNIS M

Abstract: Disclosed herein are methods of depositing a SiN film having a reduced wet etch rate. The methods may include adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor may then be reacted by exposing it to a plasma comprising N-containing ions and/or radicals to form a SiN film layer on the substrate, and the SiN film layer may then be densified by exposing it to a He plasma. The foregoing steps may then be repeated to form another densified SiN film layer on the substrate. Also disclosed herein are apparatuses for depositing SiN films having reduced wet etch rates on semiconductor substrates which employ the foregoing techniques.

公开(公告)号：SG10201408801QA

公开(公告)日：2015-07-30

申请号：SG10201408801Q

申请日：2014-12-30

Applicant: LAM RES CORP

Inventor： SIMS JAMES S ,  HENRI JON ,  KELCHNER KATHRYN M ,  JANJAM SATHISH BABU S V ,  TANG SHANE

Abstract: PROBLEM TO BE SOLVED: To provide techniques of forming a uniform film on an uneven face of a semiconductor substrate having patterns.SOLUTION: While operation of plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasma, pulsed plasma is utilized to achieve a film with high quality sidewalls. The increased sidewall quality corresponds to a film that is overall more uniform in quality.