公开(公告)号：SG10201802228YA

公开(公告)日：2018-10-30

申请号：SG10201802228Y

申请日：2018-03-19

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: SELECTIVEGROWTH OF SILICON NITRIDE Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve exposing the substrate to an alkene which is selectively reactive with the silicon surface to block the silicon surface by forming an organic moiety on the silicon surface prior to depositing silicon nitride selectively on silicon oxide surfaces using thermal atomic layer deposition. Methods involve exposing the substrate to an alkylsilylhalide which is selectively reactive with the silicon oxide surface to block the silicon oxide surface by forming an organic moiety on the silicon oxide surface prior to depositing silicon nitride selectively on silicon surfaces using thermal atomic layer deposition. Fig. 35

公开(公告)号：SG10201801141TA

公开(公告)日：2018-09-27

申请号：SG10201801141T

申请日：2018-02-09

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: an c·Yl·Hl",....1 o 3 30

公开(公告)号：SG11202006145WA

公开(公告)日：2020-07-29

申请号：SG11202006145W

申请日：2018-12-14

Applicant: LAM RES CORP

Inventor： SMITH DAVID C ,  HAUSMANN DENNIS M

IPC: C23C16/455

Abstract: Methods and systems for conformality modulation of metal oxide films in atomic layer deposition (ALD) are provided. Some example methods use chemical inhibition. An example system for performing such a method comprises a chamber; a source of precursor gas; a source of inhibiting precursor gas; one or more injectors having respective gas flow paths, each having an inlet connectable to the source of the precursor or the inhibiting precursor gas, and being adapted to deliver into the chamber, separately or in conjunction with another injector, precursor gas at a first gaseous flow rate in a first region of the plurality of regions to form a first film at a first deposition rate, and being adapted to deliver inhibiting precursor gas at a second gaseous flow rate in the same or a second region of the plurality of regions to inhibit growth of the first film.

公开(公告)号：SG10201801817QA

公开(公告)日：2018-10-30

申请号：SG10201801817Q

申请日：2018-03-06

Applicant: LAM RES CORP

Inventor： SMITH DAVID CHARLES ,  HAUSMANN DENNIS M

Abstract: SELECTIVE DEPOSITION OF SILICON NITRIDE ON SILICON OXIDE USING CATALYTIC CONTROL Methods and apparatuses for selectively depositing silicon nitride on exposed silicon oxide surfaces of a substrate relative to exposed silicon surfaces are provided herein. Techniques involve providing trimethylaluminum to the substrate to form an aluminum-containing moiety on an exposed silicon oxide surface and selectively depositing silicon nitride on the surface using alternating pulses of an aminosilane and a hydrazine by thermal atomic layer deposition catalyzed by the aluminum-containing moiety on the exposed silicon oxide surface relative to an exposed silicon surface. Additional techniques involve providing a transition metal-containing gas to an exposed silicon oxide surface to form a transition metal-containing moiety that acts as a catalyst during thermal atomic layer deposition of silicon nitride using alternating pulses of an aminosilane and a hydrazine. Fig. 38

公开(公告)号：SG10201507848XA

公开(公告)日：2016-04-28

申请号：SG10201507848X

申请日：2015-09-21

Applicant: LAM RES CORP

Inventor： SIMS JAMES S ,  KELCHNER KATHRYN M ,  HENRI JON ,  HAUSMANN DENNIS M

Abstract: Disclosed herein are methods of depositing a SiN film having a reduced wet etch rate. The methods may include adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor may then be reacted by exposing it to a plasma comprising N-containing ions and/or radicals to form a SiN film layer on the substrate, and the SiN film layer may then be densified by exposing it to a He plasma. The foregoing steps may then be repeated to form another densified SiN film layer on the substrate. Also disclosed herein are apparatuses for depositing SiN films having reduced wet etch rates on semiconductor substrates which employ the foregoing techniques.

公开(公告)号：SG10201600099VA

公开(公告)日：2016-08-30

申请号：SG10201600099V

申请日：2016-01-07

Applicant: LAM RES CORP

Inventor： KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  SINGH HARMEET ,  TAN SAMANTHA ,  KABANSKY ALEXANDER ,  YANG WENBING ,  KIM TAESEUNG ,  HAUSMANN DENNIS M ,  LILL THORSTEN

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

公开(公告)号：SG10201800863VA

公开(公告)日：2018-11-29

申请号：SG10201800863V

申请日：2018-02-01

Applicant: LAM RES CORP

Inventor： REDDY KAPU SIRISH ,  RAINVILLE MELIHA GOZDE ,  SHANKAR NAGRAJ ,  HAUSMANN DENNIS M ,  SMITH DAVID CHARLES ,  SIVARAMAKRISHNAN KARTHIK ,  PORTER DAVID W

Abstract: SELECTIVEDEPOSITION WITH ATOMIC LAYER ETCH RESET Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate. Fig. 47