公开(公告)号：WO0249805A8

公开(公告)日：2004-03-04

申请号：PCT/US0150625

申请日：2001-12-21

Applicant: LAM RES CORP ,  KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/10 ,  B24B21/04 ,  B24B37/12 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08 ,  H01L21/304 ,  B24B37/04

CPC classification number: B24B37/12 ,  B24B21/04 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08

Abstract: An invention is disclosed for impoved performance in a CMP process using a pressurized membrane (312) and piezoelectric elements (702) as replacements for a platen (308) air bearing. In one embodiment, a platen form impoving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders (314) disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process. In a further embodiment, piezoeletric elements are disposeed above the platen, which exert force on the polishing belt (310) during a CMP process, resulting in improved zonal control during the CMP process.

Abstract translation: 公开了一种使用加压膜（312）和压电元件（702）作为压板（308）空气轴承的替代物的CMP工艺中的突出性能的发明。 在一个实施例中，公开了在CMP应用中具有优势的压板形式。 压盘包括设置在压板上方的膜和设置在膜下方的多个环形囊（314），其中环形囊可以在膜上施加力。 以这种方式，在CMP过程中提供了区域控制。 在另一个实施例中，压电元件在压板之上被放置，其在CMP工艺期间在抛光带（310）上施加力，导致在CMP工艺期间改进的区域控制。

公开(公告)号：WO02053322A3

公开(公告)日：2003-05-01

申请号：PCT/US0148658

申请日：2001-12-13

Applicant: LAM RES CORP ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  KISTLER ROD

Inventor： BOYD JOHN M ,  GOTKIS YEHIEL ,  KISTLER ROD

IPC: B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract translation: 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：AU3288902A

公开(公告)日：2002-07-01

申请号：AU3288902

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/04 ,  B24B37/12 ,  B24B49/16 ,  B24D9/08 ,  B24B37/04

Abstract: An invention is disclosed for improved performance in a CMP process using piezoelectric elements as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a plurality of piezoelectric elements disposed above the platen. In operation, the piezoelectric elements are used to exert force on the polishing belt during a CMP process. In this manner, zonal control is provided during the CMP process.

公开(公告)号：DE60104903T2

公开(公告)日：2005-09-08

申请号：DE60104903

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/10 ,  B24B21/04 ,  B24B37/12 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08 ,  H01L21/304 ,  B24B37/04

Abstract: An invention is disclosed for impoved performance in a CMP process using a pressurized membrane (312) and piezoelectric elements (702) as replacements for a platen (308) air bearing. In one embodiment, a platen form impoving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders (314) disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process. In a further embodiment, piezoeletric elements are disposeed above the platen, which exert force on the polishing belt (310) during a CMP process, resulting in improved zonal control during the CMP process.

公开(公告)号：DE60102891D1

公开(公告)日：2004-05-27

申请号：DE60102891

申请日：2001-01-12

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  GOTKIS YEHIEL

IPC: B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B37/04 ,  B24B53/02 ,  B24D7/14 ,  B24B47/10

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

公开(公告)号：DE60105061D1

公开(公告)日：2004-09-23

申请号：DE60105061

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEK ,  BOYD JOHN ,  KISTLER ROD

IPC: B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B37/04

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

公开(公告)号：AU2002241637A1

公开(公告)日：2002-07-16

申请号：AU2002241637

申请日：2001-12-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  KISTLER ROD ,  GOTKIS YEHIEL

IPC: B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

公开(公告)号：AU3133202A

公开(公告)日：2002-07-01

申请号：AU3133202

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEK ,  BOYD JOHN ,  KISTLER ROD

IPC: B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B37/04

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

公开(公告)号：AU2940301A

公开(公告)日：2001-08-07

申请号：AU2940301

申请日：2001-01-12

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  GOTKIS YEHIEL

IPC: B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B37/04 ,  B24B53/02 ,  B24D7/14 ,  B24B47/10

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

公开(公告)号：DE60105061T2

公开(公告)日：2005-09-01

申请号：DE60105061

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEK ,  BOYD JOHN ,  KISTLER ROD

IPC: B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B37/04

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.