公开(公告)号：AT255275T

公开(公告)日：2003-12-15

申请号：AT98913017

申请日：1998-03-26

Applicant: LAM RES CORP

Inventor： KENNEDY WILLIAM S ,  LAMM ALBERT J ,  WICKER THOMAS E ,  MARASCHIN ROBERT A

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

公开(公告)号：AU7740400A

公开(公告)日：2001-04-30

申请号：AU7740400

申请日：2000-09-29

Applicant: LAM RES CORP ,  VERITY INSTR INC

Inventor： MUNDT RANDALL S ,  LAMM ALBERT J ,  WHELAN MIKE ,  KUENY ANDREW WEEKS

IPC: G01N21/956 ,  G01N21/95 ,  H01L21/66 ,  G01B11/30

Abstract: Apparatus characterizes the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.