公开(公告)号：DE69820041D1

公开(公告)日：2004-01-08

申请号：DE69820041

申请日：1998-03-26

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  LAMM J ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

公开(公告)号：DE69820041T2

公开(公告)日：2004-09-02

申请号：DE69820041

申请日：1998-03-26

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  LAMM J ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.