公开(公告)号：DE69718321T2

公开(公告)日：2003-10-16

申请号：DE69718321

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： WICKER E ,  COOK M ,  MARASCHIN A ,  KENNEDY S ,  BENJAMIN NEIL

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

公开(公告)号：DE69928289T2

公开(公告)日：2006-08-10

申请号：DE69928289

申请日：1999-09-24

Applicant: LAM RES CORP

Inventor： WICKER E ,  MARASCHIN A ,  KENNEDY S

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.

公开(公告)号：DE69820041T2

公开(公告)日：2004-09-02

申请号：DE69820041

申请日：1998-03-26

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  LAMM J ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.

公开(公告)号：DE69934000T2

公开(公告)日：2007-09-20

申请号：DE69934000

申请日：1999-03-26

Applicant: LAM RES CORP

Inventor： SCHOEPP M ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

公开(公告)号：DE69934000D1

公开(公告)日：2006-12-28

申请号：DE69934000

申请日：1999-03-26

Applicant: LAM RES CORP

Inventor： SCHOEPP M ,  WICKER E ,  MARASCHIN A

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

公开(公告)号：DE69726308D1

公开(公告)日：2003-12-24

申请号：DE69726308

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  WICKER E ,  MARASCHIN A ,  COOK M ,  SCHOEPP M

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

公开(公告)号：DE69931168D1

公开(公告)日：2006-06-08

申请号：DE69931168

申请日：1999-06-30

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK S ,  KENNEDY S ,  MARASCHIN A

IPC: H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically andor thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

公开(公告)号：DE69726308T2

公开(公告)日：2004-08-26

申请号：DE69726308

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： KENNEDY S ,  WICKER E ,  MARASCHIN A ,  COOK M ,  SCHOEPP M

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

公开(公告)号：DE69718321D1

公开(公告)日：2003-02-13

申请号：DE69718321

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： WICKER E ,  COOK M ,  MARASCHIN A ,  KENNEDY S ,  BENJAMIN NEIL

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

公开(公告)号：DE69931168T2

公开(公告)日：2007-03-08

申请号：DE69931168

申请日：1999-06-30

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK S ,  KENNEDY S ,  MARASCHIN A

IPC: H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically andor thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.