公开(公告)号：WO2009008958A3

公开(公告)日：2009-04-16

申请号：PCT/US2008007759

申请日：2008-06-20

Applicant: LAM RES CORP ,  YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

Inventor： YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

IPC: H01L21/3065

CPC classification number: H01L21/02063 ,  H01L21/6708

Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

Abstract translation: 用于从衬底表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底表面去除蚀刻后聚合物残余物的干闪光化学物质。 干闪化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。 使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。 然后将湿清洗化学品施加到基底的表面。 湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

公开(公告)号：SG183018A1

公开(公告)日：2012-08-30

申请号：SG2012051389

申请日：2008-06-20

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  WILCOXSON MARK ,  ZHU JI ,  CHUANG KEVIN ,  CHANG HSIAO WEI ,  LOU DAVID

Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.(Figure 2A)