公开(公告)号：WO9910923B1

公开(公告)日：1999-05-14

申请号：PCT/US9817607

申请日：1998-08-25

Applicant: LAM RES CORP

Inventor： ZHU HELEN H ,  MUELLER GEORGE A ,  NGUYEN THOMAS D ,  LI LUMIN

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si3N4, TiN, and metal silicides.

Abstract translation: 公开了一种用于改善电介质层对光致抗蚀剂层和基层的选择性的方法。 该方法在等离子体处理室中执行，并且光致抗蚀剂层被涂覆在介电层上。 该方法包括将蚀刻剂源气体引入等离子体处理室，该等离子体处理室基本上由CxFy气体和N 2气体组成。 该方法还包括在等离子体处理室中从蚀刻剂源气体中打出等离子体。 该方法另外包括用等离子体将至少一部分介电层蚀刻到位于介电层下面的基底层。 该方法也非常适合于对Si，Si 3 N 4，TiN和金属硅化物具有非常高的选择性的各向异性蚀刻氧化物层。