TSV BATH EVALUATION USING FIELD VERSUS FEATURE CONTRAST

    公开(公告)号:SG10201802369YA

    公开(公告)日:2018-04-27

    申请号:SG10201802369Y

    申请日:2014-05-16

    Applicant: LAM RES CORP

    Abstract: The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the substrate during the fill process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feature.

    TSV BATH EVALUATION USING FIELD VERSUS FEATURE CONTRAST

    公开(公告)号:SG10201402383QA

    公开(公告)日:2015-01-29

    申请号:SG10201402383Q

    申请日:2014-05-16

    Applicant: LAM RES CORP

    Abstract: TSV BATH EVALUATION USING FIELD VERSUS [0179] The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates conditions present in a feature on the substrate during the fiIi process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feattue. FIG.2B 62

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