公开(公告)号：SG10201802369YA

公开(公告)日：2018-04-27

申请号：SG10201802369Y

申请日：2014-05-16

Applicant: LAM RES CORP

Inventor： BROGAN LEE ,  MAYER STEVEN T ,  THORUM MATTHEW ,  RICHARDSON JOSEPH ,  PORTER DAVID W ,  FU HAIYING

Abstract: The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the substrate during the fill process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feature.

公开(公告)号：SG10201800863VA

公开(公告)日：2018-11-29

申请号：SG10201800863V

申请日：2018-02-01

Applicant: LAM RES CORP

Inventor： REDDY KAPU SIRISH ,  RAINVILLE MELIHA GOZDE ,  SHANKAR NAGRAJ ,  HAUSMANN DENNIS M ,  SMITH DAVID CHARLES ,  SIVARAMAKRISHNAN KARTHIK ,  PORTER DAVID W

Abstract: SELECTIVEDEPOSITION WITH ATOMIC LAYER ETCH RESET Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate. Fig. 47

公开(公告)号：SG10201402383QA

公开(公告)日：2015-01-29

申请号：SG10201402383Q

申请日：2014-05-16

Applicant: LAM RES CORP

Inventor： BROGAN LEE ,  MAYER STEVEN T ,  THORUM MATTHEW ,  RICHARDSON JOSEPH ,  PORTER DAVID W ,  FU HAIYING

Abstract: TSV BATH EVALUATION USING FIELD VERSUS [0179] The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates conditions present in a feature on the substrate during the fiIi process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feattue. FIG.2B 62