公开(公告)号：AT273562T

公开(公告)日：2004-08-15

申请号：AT98963099

申请日：1998-12-11

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  TOKUNAGA KEN ,  SINGH VIKRAM

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

公开(公告)号：DE69833436T2

公开(公告)日：2006-10-26

申请号：DE69833436

申请日：1998-06-24

Applicant: LAM RES CORP

Inventor： LEE CHANGHUN ,  SINGH VIKRAM ,  YANG JACK

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H2O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

公开(公告)号：AT317592T

公开(公告)日：2006-02-15

申请号：AT98931533

申请日：1998-06-24

Applicant: LAM RES CORP

Inventor： LEE CHANGHUN ,  SINGH VIKRAM ,  YANG YUN-YEN JACK

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H2O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

公开(公告)号：DE69833436D1

公开(公告)日：2006-04-20

申请号：DE69833436

申请日：1998-06-24

Applicant: LAM RES CORP

Inventor： LEE CHANGHUN ,  SINGH VIKRAM ,  YANG JACK

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H2O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

公开(公告)号：DE69825630T2

公开(公告)日：2005-09-15

申请号：DE69825630

申请日：1998-12-11

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  TOKUNAGA KEN ,  SINGH VIKRAM

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.

公开(公告)号：DE69825630D1

公开(公告)日：2004-09-16

申请号：DE69825630

申请日：1998-12-11

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  TOKUNAGA KEN ,  SINGH VIKRAM

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: An improved focus ring is configured for use in a plasma processing chamber. The focus ring is configured to overlap at least a portion of a substrate-holding chuck that is powered by radio frequency (RF) power during plasma operation to act as an electrode. The focus ring includes an upper surface that is exposed to a plasma region within the plasma processing chamber during the plasma operation. The focus ring further includes a chuck-overlapping portion that overlaps the portion of the substrate-holding chuck, at least a portion of the chuck-overlapping portion being formed of a first material having a lower dielectric constant than a remainder of the focus ring.