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    Gas distribution apparatus for semiconductor processing
    1.
    发明授权
    Gas distribution apparatus for semiconductor processing 有权
    用于半导体加工的气体分配装置

    公开(公告)号：US6432831B2

    公开(公告)日：2002-08-13

    申请号：US81497201

    申请日：2001-03-23

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

    IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302

    CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

    Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

    Abstract translation: 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。 包括一个或多个挡板的挡板组件位于气体分配室内。 挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。 因为在靠近第一和第二气体供应出口的位置处的气体的压力较大，所以可以使喷头背面的气体压力比单个气体供应的情况更均匀。 在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。 在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

    UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF
    3.
    发明公开
    UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开
    VEREINHEITLICHEBESCHRÄNKUNGSRINGANORDNUNGENUND VERFAHRENDAFÜR

    公开(公告)号：EP2484185A4

    公开(公告)日：2014-07-23

    申请号：EP10819603

    申请日：2010-09-27

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  KALYANARAMAN RAJARAMANAN ,  MANI SATHYANARAYANAN ,  BHATTACHARYYA GUATAM

    IPC: C23C16/455 ,  H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J2237/334

    Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

    Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 该装置还包括至少一个柱塞，该柱塞构造用于沿垂直方向移动单位化限制环装置以调节第一气体导通路径和第二气体导电路径中的至少一个，以执行压力控制，其中第一气体导电路径 形成在上电极和单元化限制环装置之间，并且第二气体导电路径形成在下电极和单一组合环装置之间。

    APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING
    6.
    发明公开
    APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING 审中-公开
    VORRICHTUNG MIT PROZESSGASZUFÜHRENDEMGASVERTEILERELEMENT UND HOCHFREQUENZSTROMFÜRDIE PLASMAVERARBEITUNG

    公开(公告)号：EP1769101A4

    公开(公告)日：2010-03-03

    申请号：EP05732428

    申请日：2005-04-11

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  LENZ ERIC

    IPC: H01J37/32 ,  C23F1/00

    CPC classification number: H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

    Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

    Abstract translation: 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

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