公开(公告)号：SG11202006145WA

公开(公告)日：2020-07-29

申请号：SG11202006145W

申请日：2018-12-14

Applicant: LAM RES CORP

Inventor： SMITH DAVID C ,  HAUSMANN DENNIS M

IPC: C23C16/455

Abstract: Methods and systems for conformality modulation of metal oxide films in atomic layer deposition (ALD) are provided. Some example methods use chemical inhibition. An example system for performing such a method comprises a chamber; a source of precursor gas; a source of inhibiting precursor gas; one or more injectors having respective gas flow paths, each having an inlet connectable to the source of the precursor or the inhibiting precursor gas, and being adapted to deliver into the chamber, separately or in conjunction with another injector, precursor gas at a first gaseous flow rate in a first region of the plurality of regions to form a first film at a first deposition rate, and being adapted to deliver inhibiting precursor gas at a second gaseous flow rate in the same or a second region of the plurality of regions to inhibit growth of the first film.