公开(公告)号：EP1697970A4

公开(公告)日：2008-08-06

申请号：EP04815227

申请日：2004-12-21

Applicant: LAM RES CORP

Inventor： TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76811

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

公开(公告)号：WO2011050171A4

公开(公告)日：2011-10-20

申请号：PCT/US2010053564

申请日：2010-10-21

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

Abstract translation: 提供了一种用有机化合物对硅基低k电介质层的损伤进行调谐修复的方法，其中损伤取代了附着于硅的羟基与硅连接的甲基。 提供前体气体，其包含表示为Si-（R）x（OR'）y的第一修复剂，其中y≥1并且x + y = 4，并且其中R是烷基或芳基，并且R'是 烷基或芳基和第二修复剂，表示为Si-（R）x（OR'）yR“，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基 或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 第一修复剂和第二修复剂中的一些结合到低k电介质以形成第一修复剂和第二修复剂的单层。

公开(公告)号：WO2011050171A3

公开(公告)日：2011-09-01

申请号：PCT/US2010053564

申请日：2010-10-21

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

公开(公告)号：WO2005062885A3

公开(公告)日：2006-09-28

申请号：PCT/US2004043115

申请日：2004-12-21

Applicant: LAM RES CORP ,  TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

Inventor： TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/48 ,  H01L21/302 ,  H01L21/44

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76811

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate. The bias RF signal has a bias RF frequency of between about 27 MHz and about 75 MHz and a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold or configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.

Abstract translation: 一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。 该方法包括将基板放置在等离子体处理系统的等离子体处理室中。 该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。 该方法还包括从蚀刻剂源气体冲击等离子体。 此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号。 偏置RF信号具有在约27MHz至约75MHz之间的偏置RF频率以及被配置为使蚀刻特征被蚀刻的偏压RF功率分量，其中衬底的第二层的蚀刻选择性高于 预定义的选择性阈值或者被配置为根据预定的蚀刻速率参数和偏置RF频率下的蚀刻轮廓参数来对特征进行蚀刻。

公开(公告)号：IL176466A

公开(公告)日：2010-05-31

申请号：IL17646606

申请日：2006-06-21

Applicant: LAM RES CORP ,  TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

Inventor： TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/768

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.