公开(公告)号：EP1896367A4

公开(公告)日：2011-12-14

申请号：EP06784838

申请日：2006-06-13

Applicant: LAM RES CORP

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C02F1/00 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

公开(公告)号：EP2380412A4

公开(公告)日：2015-03-18

申请号：EP09837887

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/3299 ,  H01L21/3065

公开(公告)号：EP2417625A4

公开(公告)日：2015-12-02

申请号：EP10762274

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/24 ,  H05H1/36

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

公开(公告)号：EP2380413A4

公开(公告)日：2015-12-02

申请号：EP09837888

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/36 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32091

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

公开(公告)号：EP1697970A4

公开(公告)日：2008-08-06

申请号：EP04815227

申请日：2004-12-21

Applicant: LAM RES CORP

Inventor： TAKESHITA KENJI ,  TURMEL ODETTE ,  KOZAKEVICH FELIX ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/768

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76811

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

公开(公告)号：JP2007294419A

公开(公告)日：2007-11-08

申请号：JP2007064587

申请日：2007-03-14

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: H05H1/00 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32935

Abstract: PROBLEM TO BE SOLVED: To provide an adjustable height PIF (plasma ion flux) probe for measuring a set of electric characteristics in plasma.
SOLUTION: A plasma probe assembly 140 for use in a plasma processing chamber is provided. A semiconductor probe element 304 with a probe surface 308 at a first end of the semiconductor probe element is provided. An electrical connector 312 is electrically connected to the semiconductor probe element 304. An electrically insulating sleeve 316 surrounds at least part of the probe element 304. An adjustment device is connected to a semiconductor probe shaft 352 so that the probe surface 308 is coplanar with an interior chamber surface of the plasma processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供用于测量等离子体中的一组电特性的可调高度PIF（等离子体离子通量）探针。 解决方案：提供一种用于等离子体处理室的等离子体探针组件140。 提供了在半导体探针元件的第一端具有探针表面308的半导体探针元件304。 电连接器312电连接到半导体探针元件304.电绝缘套管316围绕探针元件304的至少一部分。调节装置连接到半导体探针轴352，使得探针表面308与 等离子体处理室的内室表面。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：WO2013070472A3

公开(公告)日：2015-06-11

申请号：PCT/US2012062867

申请日：2012-10-31

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

IPC: C23C14/34

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

Abstract: A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

Abstract translation: 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

公开(公告)号：WO2008010943A3

公开(公告)日：2009-04-09

申请号：PCT/US2007015928

申请日：2007-07-13

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32091 ,  H01J2237/03

Abstract: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

Abstract translation: 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：WO2006104841B1

公开(公告)日：2008-02-21

申请号：PCT/US2006010576

申请日：2006-03-24

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/00

CPC classification number: H01J37/32963 ,  H01J37/32935

Abstract: A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract translation: 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：WO2007001838A3

公开(公告)日：2008-07-17

申请号：PCT/US2006023042

申请日：2006-06-13

Applicant: LAM RES CORP ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  MARAKHTANOV ALEXEI

IPC: H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/321

Abstract: In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.

Abstract translation: 在具有等离子体处理室，至少一个通电电极和点火电极的等离子体处理系统中，公开了一种用于点燃等离子体的方法。 该方法包括将衬底引入到等离子体处理室中。 该方法还包括使气体混合物流入等离子体处理室; 以点火频率激励点火电极; 并用点火电极从气体混合物中打出等离子体。 该方法还包括用目标频率激励至少一个带电电极，其中击打频率大于目标频率; 并在处理等离子体处理室中的衬底的同时使点火电极断电。