公开(公告)号：AT499701T

公开(公告)日：2011-03-15

申请号：AT03759493

申请日：2003-09-18

Applicant: LAM RES CORP

Inventor： KAMP TOM ,  MILLER ALAN ,  VENUGOPAL VIJAYAKUMAR

IPC: H01L21/3065 ,  H01L21/00

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

公开(公告)号：AT445141T

公开(公告)日：2009-10-15

申请号：AT03785204

申请日：2003-08-12

Applicant: LAM RES CORP

Inventor： VENUGOPAL VIJAYAKUMAR ,  PERRY ANDREW

IPC: G01B11/02 ,  G01B11/06 ,  G01N21/00 ,  G01N21/27 ,  G01N21/45 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/334 ,  H01L21/8242 ,  H01L27/108

Abstract: A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.