公开(公告)号：AT499701T

公开(公告)日：2011-03-15

申请号：AT03759493

申请日：2003-09-18

Applicant: LAM RES CORP

Inventor： KAMP TOM ,  MILLER ALAN ,  VENUGOPAL VIJAYAKUMAR

IPC: H01L21/3065 ,  H01L21/00

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

公开(公告)号：AT362652T

公开(公告)日：2007-06-15

申请号：AT03728281

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.