公开(公告)号：SG10201805023PA

公开(公告)日：2018-07-30

申请号：SG10201805023P

申请日：2014-12-03

Applicant: LAM RES CORP

Inventor： INDRAKANTI ANANTH ,  WANG PENG ,  HUDSON ERIC A

Abstract: OF THE DISCLOSURE METHOD FOR FORMING SELF 唰ALIGNED CONTACTS/ VIAS 研'1TH HIGH CORNER SELECTIVITY A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarizatio 丑 layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low去 dielectric 10 layer masked by the deposition layer. FIG. 1 2 0

公开(公告)号：SG10201408046TA

公开(公告)日：2015-07-30

申请号：SG10201408046T

申请日：2014-12-03

Applicant: LAM RES CORP

Inventor： INDRAKANTI ANANTH ,  WANG PENG ,  HUDSON ERIC A

Abstract: A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.