中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

26 records (took 0.023 seconds)

    REDUCTION OF FEATURE CRITICAL DIMENSIONS
    1.
    发明申请
    REDUCTION OF FEATURE CRITICAL DIMENSIONS 审中-公开
    减少特征关键尺寸

    公开(公告)号：WO2005024904A3

    公开(公告)日：2006-06-15

    申请号：PCT/US2004024853

    申请日：2004-07-29

    Applicant: LAM RES CORP ,  KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

    Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

    IPC: H01L21/44 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

    Abstract: A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316).

    Abstract translation: 提供层（308）中的特征。 在层（308）之上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征（312），其中光致抗蚀剂特征（312）具有第一临界尺寸（316）。 在光致抗蚀剂特征（312）的侧壁上沉积保形层（320），以减少光致抗蚀剂特征（312）的临界尺寸。 特征被蚀刻到层（308）中，其中层（308）特征具有小于第一临界尺寸（316）的第二临界尺寸（324）。

    ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS
    2.
    发明申请
    ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
    具有减少线路边缘粗糙度的蚀刻特征

    公开(公告)号：WO2007021540A3

    公开(公告)日：2007-12-21

    申请号：PCT/US2006030028

    申请日：2006-08-01

    Applicant: LAM RES CORP ,  SADJADI S M REZA ,  HUDSON ERIC A

    Inventor： SADJADI S M REZA ,  HUDSON ERIC A

    IPC: G03F7/40 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31144

    Abstract: A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.

    Abstract translation: 提供了一种用于在具有减少的线边缘粗糙化的层中形成特征的方法。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以与光致抗蚀剂侧壁形成光致抗蚀剂特征。 通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。 每个循环包括在光致抗蚀剂层上沉积层，其中沉积层的厚度在单层至20nm之间。 通过光刻胶特征将特征蚀刻到该层中。 光刻胶层和侧壁层被剥离。

    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES
    5.
    发明申请
    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
    使用各种频率的RF功率的调制的高比例比较

    公开(公告)号：WO2005022623B1

    公开(公告)日：2005-05-26

    申请号：PCT/US2004025406

    申请日：2004-08-06

    Applicant: LAM RES CORP ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

    CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

    Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).

    Abstract translation: 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。 向处理室提供蚀刻剂气体（408）。 提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。 可选地，还可以提供第三蚀刻步骤（420）。

    METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY
    6.
    发明申请
    METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY 审中-公开
    使用气体化学周期性调制进行等离子体蚀刻的方法

    公开(公告)号：WO2004093176B1

    公开(公告)日：2005-01-13

    申请号：PCT/US2004010170

    申请日：2004-04-01

    Applicant: LAM RES CORP ,  HUDSON ERIC A ,  TIETZ JAMES V

    Inventor： HUDSON ERIC A ,  TIETZ JAMES V

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/461

    CPC classification number: H01L21/31116 ,  H01L21/30655

    Abstract: A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.

    Abstract translation: 提供了一种用于在衬底上蚀刻层的方法。 进行气体调制循环过程超过三个循环。 每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段，其在每个循环中以约0.0055至7秒进行，并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段， 反应性蚀刻气体化学，其在每个循环中以约0.005至14秒钟进行。 保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。 每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。

    STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS
    8.
    发明申请
    STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
    用于蚀刻过程的稳定的光电子结构

    公开(公告)号：WO2006096528A2

    公开(公告)日：2006-09-14

    申请号：PCT/US2006007643

    申请日：2006-03-02

    Applicant: LAM RES CORP ,  SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

    Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

    IPC: H01L21/027 ,  G03F7/40

    CPC classification number: H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

    Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。 第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。 在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。 特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。

    VERTICAL PROFILE FIXING
    10.
    发明申请
    VERTICAL PROFILE FIXING 审中-公开
    垂直轮廓固定

    公开(公告)号：WO2007041423A1

    公开(公告)日：2007-04-12

    申请号：PCT/US2006038299

    申请日：2006-09-29

    Applicant: LAM RES CORP ,  SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

    Inventor： SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

    IPC: H01L21/311 ,  G03F7/40 ,  H01L21/027

    CPC classification number: H01L21/0273 ,  H01L21/31144

    Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

    Abstract translation: 提供了一种用于蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。

Patent Agency Ranking