APPARATUS AND METHODS FOR ALIGNING A SURFACE OF AN ACTIVE RETAINER RING WITH A WAFER SURFACE FOR CHEMICAL MECHANICAL POLISHING
    1.
    发明申请
    APPARATUS AND METHODS FOR ALIGNING A SURFACE OF AN ACTIVE RETAINER RING WITH A WAFER SURFACE FOR CHEMICAL MECHANICAL POLISHING 审中-公开
    用于化学机械抛光用于表面的活性保持环的表面的装置和方法

    公开(公告)号:WO02078900A3

    公开(公告)日:2003-04-10

    申请号:PCT/US0210153

    申请日:2002-03-28

    CPC classification number: B24B37/32 B24B37/16

    Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface 210 of a wafer carrier 212 so that a wafer axis 224 of rotation is gimballed for universal movement relative to a spindle axis 218 of rotation of a wafer spindle 220 . A retainer ring 226 limits wafer movement on the carrier surface 210 perpendicular to the wafer axis. The retainer ring 226 is mounted on and movable relative to the wafer carrier 212 . A linear bearing 230 is configured with a housing 320 and a shaft 326 so that a direction of permitted movement between the wafer carrier 212 and the retainer ring 226 is only movement parallel to the wafer axis 224, so that a wafer plane and a retainer ring 226 may be co-planar.

    Abstract translation: CMP系统和方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 晶片安装在晶片载体212的载体表面210上,使得晶片轴线224旋转以相对于晶片主轴220的主轴轴线218进行通用移动。 保持环226限制垂直于晶片轴线的载体表面210上的晶片移动。 保持环226安装在晶片载体212上并相对于晶片载体212可移动。 线性轴承230被构造为具有壳体320和轴326,使得晶片载体212和保持环226之间允许的移动方向仅仅是平行于晶片轴线224的运动,使得晶片平面和保持环 226可以是共面的。

    CMP APPARATUS AND METHODS TO CONTROL THE TILT OF THE CARRIER HEAD, THE RETAINING RING AND THE PAD CONDITIONER
    2.
    发明申请
    CMP APPARATUS AND METHODS TO CONTROL THE TILT OF THE CARRIER HEAD, THE RETAINING RING AND THE PAD CONDITIONER 审中-公开
    CMP装置和控制运输车头,保持环和垫板调节器倾斜的方法

    公开(公告)号:WO0224410A9

    公开(公告)日:2003-03-27

    申请号:PCT/US0129799

    申请日:2001-09-21

    Applicant: LAM RES CORP

    Abstract: A CMP system make repeatable measurements of eccentric forces applied to carriers for wafer or conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. An initial coaxial relationship between an axis of rotation and a carrier axis (212) is maintained during application of the eccentric force (FP-W), such that a sensor (263) is enabled to make repeatable measurements, of the eccentric forces, and the carrier (208) may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by alinear bearing assembly (232) mounted between the carrier (208) and thsensor (263). The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring (282).

    Abstract translation: CMP系统可以重复测量施加到晶片或调节盘的载体上的偏心力。 即使这样的力偏心地施加到这样的载体,也可以精确地测量施加到载体上的力。 在施加偏心力(FP-W)期间,保持旋转轴线和载体轴线(212)之间的初始同轴关系,使得传感器(263)能够对偏心力进行可重复的测量,以及 载体(208)可以是晶片或圆顶载体。 这种初始同轴关系由安装在载体(208)和传感器(263)之间的Alinear轴承组件(232)保持。 线性轴承组件被提供为单独的直线轴承组件的阵列,其中每个单独的直线轴承组件的尺寸独立于载体承载的晶片或圆盘的直径。 线性轴承组件可以与保持环(282)组装。

    POLISHING APPARATUS AND METHODS CONTROLLING THE POLISHING PRESSURE AS A FUNCTION OF THE OVERLAPPING AREA BETWEEN THE POLISHING HEAD AND THE SEMICONDUCTOR SUBSTRATE
    3.
    发明申请
    POLISHING APPARATUS AND METHODS CONTROLLING THE POLISHING PRESSURE AS A FUNCTION OF THE OVERLAPPING AREA BETWEEN THE POLISHING HEAD AND THE SEMICONDUCTOR SUBSTRATE 审中-公开
    抛光装置和控制抛光压力作为抛光头和半导体基板之间的重叠区域的功能的方法

    公开(公告)号:WO0216078A3

    公开(公告)日:2002-07-04

    申请号:PCT/US0126319

    申请日:2001-08-22

    Applicant: LAM RES CORP

    Abstract: CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

    Abstract translation: CMP系统和方法实施用于相对于晶片(206)和保持环(282)移动抛光垫(202)并用于施加用于CMP操作的压力的指令。 抛光垫位置的反馈与可变力的期望输入的确定协调,通过该可变力的变化区域分别促使晶片(206),垫调节盘(220)和保持环(282)的改变区域与抛光垫接触 (202),使得每个这样的区域上的压力被单独控制。 处理工作量根据与指令特性相关的标准进行评估。 如果没有超出标准,则使用中央CMP处理器(2106)进行处理。 如果超过了任何标准,则通过力控制器(2302)与中央CMP处理器(2106)分开进行力确定,并且中央处理器(2106)管理向力控制器的数据传送。

    Apparatus and methods for aligning a surface of an active retainer ring with a wafer surface for chemical mechanical polishing

    公开(公告)号:AU2002254492A1

    公开(公告)日:2002-10-15

    申请号:AU2002254492

    申请日:2002-03-28

    Applicant: LAM RES CORP

    Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (210) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220). A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis (224). The retainer ring (226) is mounted on and movable relative to the wafer carrier (212). A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

    Cmp apparatus and methods to control the tilt of the carrier head, the retainingring and the pad conditioner

    公开(公告)号:AU9121801A

    公开(公告)日:2002-04-02

    申请号:AU9121801

    申请日:2001-09-21

    Applicant: LAM RES CORP

    Abstract: A CMP system make repeatable measurements of eccentric forces applied to carriers for wafer or conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. An initial coaxial relationship between an axis of rotation and a carrier axis (212) is maintained during application of the eccentric force (FP-W), such that a sensor (263) is enabled to make repeatable measurements, of the eccentric forces, and the carrier (208) may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by alinear bearing assembly (232) mounted between the carrier (208) and thsensor (263). The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring (282).

    Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head

    公开(公告)号:AU8522601A

    公开(公告)日:2002-03-04

    申请号:AU8522601

    申请日:2001-08-22

    Applicant: LAM RES CORP

    Abstract: CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

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