公开(公告)号：WO0216078A3

公开(公告)日：2002-07-04

申请号：PCT/US0126319

申请日：2001-08-22

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  WILLIAMS DAMON VINCENT

IPC: B24B41/04 ,  B24B41/06 ,  B24B49/16 ,  B24B53/007 ,  H01L21/304 ,  H01L21/306 ,  B24B37/04 ,  G05D15/01

CPC classification number: B24B53/017 ,  B24B41/04 ,  B24B41/061 ,  B24B49/16 ,  H01L21/30625

Abstract: CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

Abstract translation: CMP系统和方法实施用于相对于晶片（206）和保持环（282）移动抛光垫（202）并用于施加用于CMP操作的压力的指令。 抛光垫位置的反馈与可变力的期望输入的确定协调，通过该可变力的变化区域分别促使晶片（206），垫调节盘（220）和保持环（282）的改变区域与抛光垫接触 （202），使得每个这样的区域上的压力被单独控制。 处理工作量根据与指令特性相关的标准进行评估。 如果没有超出标准，则使用中央CMP处理器（2106）进行处理。 如果超过了任何标准，则通过力控制器（2302）与中央CMP处理器（2106）分开进行力确定，并且中央处理器（2106）管理向力控制器的数据传送。

公开(公告)号：WO0216075A3

公开(公告)日：2002-08-15

申请号：PCT/US0122846

申请日：2001-07-19

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

Inventor： SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

IPC: B24B37/20 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306 ,  B24B37/04

CPC classification number: B24B37/20 ,  B24B53/017 ,  H01L21/30625

Abstract: A chemical mechanical polishing (CMP) system (200) is provided. A carrier (206) has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer (202) having a one or more formed layers to be prepared. A preparation head (208) is also included and is designed to be applied to at least a portion of the wafer (202) that is less than an entire portion of the surface of the wafer (202). Preferably, the preparation head (208) and the carrier (206) are configured to rotate in opposite directions. In addition, the preparation (208) head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer (202) to an edge of the wafer (202) and from the edge of the wafer (202) to the center of the wafer(202). A support head (212) to support the top face of the wafer is also included, as well as a conditioning head (210).

Abstract translation: 提供化学机械抛光（CMP）系统（200）。 载体（206）具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片（202）。 还包括准备头（208）并被设计成施加到小于晶片（202）的表面的整个部分的至少一部分晶片（202）。 优选地，制备头（208）和载体（206）构造成沿相反方向旋转。 此外，准备（208）头还被配置为在从晶片（202）的中心的方向之一到晶片（202）的边缘和晶片（202）的边缘之间线性移动的同时振荡， 到晶片（202）的中心。 还包括用于支撑晶片顶面的支撑头（212），以及调节头（210）。

公开(公告)号：WO2011028617A3

公开(公告)日：2011-06-09

申请号：PCT/US2010046848

申请日：2010-08-26

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  SEXTON GREG

Inventor： SALDANA MIGUEL A ,  SEXTON GREG

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  Y10T137/0318

Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.

Abstract translation: 公开了一种在半导体处理室中提供用于处理衬底的多个工艺流体的装置。 该设备包括多个过程流体供应阀和限定在交叉阀和调节供应阀之间的流体供应网络。 该装置还包括通过调节供应阀连接到流体供应网络的调节流体供应。 该设备还包括多个工艺流体，其通过多个工艺流体供应阀连接到流体供应网络。 具有基板支撑件的处理室也包括在该装置中。 所述处理室还包括边缘流体供应源和中心流体供应源，所述边缘流体供应通过边缘使能阀连接到所述流体供应网络，并且所述中心供应通过中心使能阀连接到所述流体供应网络。 其中交叉阀，边缘使能阀和中心使能阀允许调节流体或过程流体中的一个流入边缘流体供应源或中心流体供应源中的一个。

公开(公告)号：WO2006012021A3

公开(公告)日：2006-09-28

申请号：PCT/US2005021202

申请日：2005-06-14

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

Inventor： SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

IPC: C23C16/00 ,  C23C16/505 ,  C23C16/52 ,  F25B29/00 ,  F28F27/00 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  F28D1/06 ,  F28D2021/0077 ,  F28F2013/006 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

Abstract: A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

Abstract translation: 对用于控制等离子体处理装置（300）的上部室（312）的温度的温度控制装置（308）进行说明。 温度控制装置包括导热体（334），其具有可拆卸地与等离子体处理装置的上室连接并与热连通的外表面和外表面。 温度控制装置还包括与导热体热连通的多个热界面层（344,348,350,352），其中至少一层是加热元件（350）; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件（326），其中所述冷却元件被配置为导入流体介质。 温度控制装置还包括用于感测上部室的温度的至少一个温度传感器，用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。

公开(公告)号：WO02078900A3

公开(公告)日：2003-04-10

申请号：PCT/US0210153

申请日：2002-03-28

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  WILLIAMS DAMON VINCENT

Inventor： SALDANA MIGUEL A ,  WILLIAMS DAMON VINCENT

IPC: B24B37/04 ,  B24B37/16 ,  B24B37/32 ,  H01L21/304 ,  B24B41/06 ,  B24B49/16

CPC classification number: B24B37/32 ,  B24B37/16

Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface 210 of a wafer carrier 212 so that a wafer axis 224 of rotation is gimballed for universal movement relative to a spindle axis 218 of rotation of a wafer spindle 220 . A retainer ring 226 limits wafer movement on the carrier surface 210 perpendicular to the wafer axis. The retainer ring 226 is mounted on and movable relative to the wafer carrier 212 . A linear bearing 230 is configured with a housing 320 and a shaft 326 so that a direction of permitted movement between the wafer carrier 212 and the retainer ring 226 is only movement parallel to the wafer axis 224, so that a wafer plane and a retainer ring 226 may be co-planar.

Abstract translation: CMP系统和方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 晶片安装在晶片载体212的载体表面210上，使得晶片轴线224旋转以相对于晶片主轴220的主轴轴线218进行通用移动。 保持环226限制垂直于晶片轴线的载体表面210上的晶片移动。 保持环226安装在晶片载体212上并相对于晶片载体212可移动。 线性轴承230被构造为具有壳体320和轴326，使得晶片载体212和保持环226之间允许的移动方向仅仅是平行于晶片轴线224的运动，使得晶片平面和保持环 226可以是共面的。

公开(公告)号：WO02079887A2

公开(公告)日：2002-10-10

申请号：PCT/US0209777

申请日：2002-03-27

Applicant: LAM RES CORP ,  SALDANA MIGUEL A

Inventor： SALDANA MIGUEL A

IPC: B24B37/005 ,  B24B37/30 ,  B24B49/16 ,  G01R31/28 ,  G05B19/408 ,  G06F19/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/461 ,  H03M1/70 ,  H03M7/24

CPC classification number: G05B19/408 ,  B24B37/005 ,  B24B37/30 ,  B24B49/16 ,  Y10S438/959

Abstract: CMP systems and methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced.

Abstract translation: 抛光垫相对于晶片和保持环移动的CMP系统和方法实施用于向CMP施加所需压力的指令用于CMP操作。 压力的计算精度和压力转换为力的提高，而不使用诸如高分辨率数字设备的高分辨率组件。 使用数字和模拟操作以及将所需压力或力从一组单元的值转换到第二组单元并且然后返回到第一组单元来实现这种改进的精度。 使用由平均分辨率数字设备处理的数据来执行量化处理。 该过程在分离的处理器之间传送压力/力尺度和压力/力设定点数据，以获得具有可接受精度的计算压力和力的值，从而消除或显着降低量化误差。

公开(公告)号：FR2953327B1

公开(公告)日：2013-02-15

申请号：FR1059905

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

Abstract: Un anneau de bord d'une chambre de gravure (100) au plasma comporte un anneau de couplage diélectrique et un anneau de bord conducteur. L'anneau diélectrique a une protubérance annulaire partant de sa périphérie intérieure et entoure un support de substrat (150). L'anneau conducteur entoure la protubérance de l'anneau diélectrique. Un substrat placé sur le support (150) le surplombe et est superposé à la protubérance de l'anneau diélectrique et à l'anneau conducteur. L'anneau diélectrique peut avoir une section rectangulaire. Les anneaux diélectrique et conducteur entourent un support. Un substrat placé sur le support (150) le surplombe et est superposé à une partie de l'anneau conducteur.

公开(公告)号：DE60216427D1

公开(公告)日：2007-01-11

申请号：DE60216427

申请日：2002-03-28

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  WILLIAMS VINCENT

IPC: B24B37/04 ,  B24B37/16 ,  B24B37/32 ,  H01L21/304

Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (210) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220). A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis (224). The retainer ring (226) is mounted on and movable relative to the wafer carrier (212). A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

公开(公告)号：DE60216427T2

公开(公告)日：2007-09-27

申请号：DE60216427

申请日：2002-03-28

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  WILLIAMS VINCENT

IPC: B24B37/04 ,  B24B37/16 ,  B24B37/32 ,  H01L21/304

Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (210) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220). A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis (224). The retainer ring (226) is mounted on and movable relative to the wafer carrier (212). A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

公开(公告)号：DE60221382D1

公开(公告)日：2007-09-06

申请号：DE60221382

申请日：2002-03-27

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A

IPC: G05B19/408 ,  B24B37/005 ,  B24B37/30 ,  B24B49/16 ,  G01R31/28 ,  G06F19/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/461 ,  H03M1/70 ,  H03M7/24

Abstract: CMP methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced.