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    SILICON ETCH WITH PASSIVATION USING CHEMICAL VAPOR DEPOSITION
    1.
    发明申请
    SILICON ETCH WITH PASSIVATION USING CHEMICAL VAPOR DEPOSITION 审中-公开
    硅钝化用化学气相沉积钝化

    公开(公告)号：WO2010047978A3

    公开(公告)日：2010-07-01

    申请号：PCT/US2009060218

    申请日：2009-10-09

    Applicant: LAM RES CORP ,  WINNICZEK JAROSLAW W ,  CHEBI ROBERT P

    Inventor： WINNICZEK JAROSLAW W ,  CHEBI ROBERT P

    IPC: H01L21/3065 ,  H01L21/205

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01L21/32137

    Abstract: A silicon layer is etched through a patterned mask formed thereon using an etch chamber. A fluorine (F) containing etch gas and a silicon (Si) containing chemical vapor deposition gas are provided in the etch chamber. The fluorine (F) containing etch gas is used to etch features into the silicon layer, and the silicon (Si) containing chemical vapor deposition gas is used to form a silicon-containing deposition layer on sidewalls of the features. A plasma is generated from the etch gas and the chemical vapor deposition gas, and a bias voltage is provided. Features are etched into the silicon layer using the plasma, and a silicon-containing passivation layer is deposited on the sidewalls of the features which are being etched. Silicon in the passivation layer primarily comes from the chemical vapor deposition gas. The etch gas and the chemical vapor deposition gas are then stopped.

    Abstract translation: 使用蚀刻室将硅层蚀刻穿过其上形成的图案化掩模。 在蚀刻室中提供包含氟（F）的蚀刻气体和包含硅（Si）的化学气相沉积气体。 使用含氟（F）蚀刻气体将特征蚀刻到硅层中，并且使用含硅（Si）的化学气相沉积气体在特征的侧壁上形成含硅沉积层。 从蚀刻气体和化学气相沉积气体产生等离子体，并提供偏置电压。 使用等离子体将特征蚀刻到硅层中，并且在正被蚀刻的特征的侧壁上沉积含硅钝化层。 钝化层中的硅主要来自化学气相沉积气体。 然后停止蚀刻气体和化学气相沉积气体。

    SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION
    3.
    发明申请
    SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION 审中-公开
    使用等离子体增强氧化的硅蚀刻

    公开(公告)号：WO2010047976A3

    公开(公告)日：2010-07-01

    申请号：PCT/US2009060214

    申请日：2009-10-09

    Applicant: LAM RES CORP ,  WINNICZEK JAROSLAW W ,  CHEBI ROBERT P

    Inventor： WINNICZEK JAROSLAW W ,  CHEBI ROBERT P

    IPC: H01L21/3065

    CPC classification number: H01L21/32137 ,  H01J37/32082 ,  H01L21/3065

    Abstract: A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.

    Abstract translation: 提供了通过形成在其上的图案化掩模来蚀刻硅层的方法和装置。 将硅层放置在蚀刻室中。 包括含氟气体和含氧和氢气的气体的蚀刻气体被提供到蚀刻室中。 从蚀刻气体产生等离子体，并且使用等离子体将特征蚀刻到硅层中。 然后停止蚀刻气体。 等离子体可能含有OH自由基。

    METHOD AND APPARATUS FOR REMOVING PHOTORESIST
    4.
    发明申请
    METHOD AND APPARATUS FOR REMOVING PHOTORESIST 审中-公开
    去除光子的方法和设备

    公开(公告)号：WO2010047970A2

    公开(公告)日：2010-04-29

    申请号：PCT/US2009060066

    申请日：2009-10-08

    Applicant: LAM RES CORP ,  CHEBI ROBERT P ,  WINNICZEK JAROSLAW W

    Inventor： CHEBI ROBERT P ,  WINNICZEK JAROSLAW W

    IPC: H01L21/3065

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

    Abstract: A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

    Abstract translation: 一种方法和设备从晶片上去除光刻胶。 提供含有硫（S），氧（O）和氢（H）的处理气体，并且在第一室中从处理气体产生等离子体。 将富含自由基的贫离子反应介质从第一室流到放置晶片的第二室。 使用反应介质去除晶片上的图案化的光致抗蚀剂层，然后停止流入第二室的反应介质。 水蒸气可以在设置在从等离子体向下流动的反应介质的通道中提供的溶剂化区中引入，使得水蒸气在反应介质到达晶片之前溶剂化反应介质以形成物质的溶剂化簇。 使用溶剂化反应介质除去光刻胶。

    METHOD FOR PROVIDING HIGH ETCH RATE
    5.
    发明申请
    METHOD FOR PROVIDING HIGH ETCH RATE 审中-公开
    提供高刻蚀速率的方法

    公开(公告)号：WO2012170302A3

    公开(公告)日：2013-02-07

    申请号：PCT/US2012040523

    申请日：2012-06-01

    Applicant: LAM RES CORP ,  XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

    Inventor： XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

    IPC: H01L21/3065

    CPC classification number: H01L21/30655 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/76802 ,  H01L21/76898

    Abstract: A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.

    Abstract translation: 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 室。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。

    HIGH STRIP RATE DOWNSTREAM CHAMBER
    6.
    发明申请
    HIGH STRIP RATE DOWNSTREAM CHAMBER 审中-公开
    高速下水箱

    公开(公告)号：WO2006107573A3

    公开(公告)日：2009-05-07

    申请号：PCT/US2006009972

    申请日：2006-03-20

    Applicant: LAM RES CORP ,  WANG ING-YANN ,  WINNICZEK JAROSLAW W ,  COOPERBERG DAVID J ,  EDELBERG ERIK A ,  CHEBI ROBERT P

    Inventor： WANG ING-YANN ,  WINNICZEK JAROSLAW W ,  COOPERBERG DAVID J ,  EDELBERG ERIK A ,  CHEBI ROBERT P

    IPC: C23C16/455 ,  C23F1/00 ,  C23F1/12 ,  H01L21/306

    CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/85938

    Abstract: A gas chamber (400) contains upper (402) and lower (404) chamber bodies forming a cavity (416), a heating chuck (430) for a wafer (420), a remote gas source (440) (440), and an exhaust unit (450). Gas is injected into the cavity (416) through channels (412) in an injector (410). Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels (412) have funnel-shaped nozzles at end points proximate to the chuck (430). The injector (410) also has thermal expansion relief slots (716) and small gaps between the injector (410) and mating surfaces of the chamber and gas source (440). The temperature of the injector (410) is controlled by a cooling liquid in cooling channels (412) and electrical heaters in receptacles of the injector (410). The upper (402) chamber body is funnel-shaped and curves downward at an end of the upper (402) chamber body proximate to the chuck (430).

    Abstract translation: 气体室（400）包含形成空腔（416）的上部（402）和下部（404）室，用于晶片（420）的加热夹盘（430），远程气体源（440） 排气单元（450）。 通过注射器（410）中的通道（412）将气体注入空腔（416）。 每个通道具有相对于彼此以足够角度弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。 通道（412）在靠近卡盘（430）的端点处具有漏斗形喷嘴。 喷射器（410）还具有热膨胀释放槽（716）和喷射器（410）与室和气体源（440）的配合表面之间的小间隙。 喷射器（410）的温度由冷却通道（412）中的冷却液体和喷射器（410）的插座中的电加热器控制。 上（402）室主体是漏斗形的，并且在靠近卡盘（430）的上（402）室主体的端部处向下弯曲。

    METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS
    7.
    发明申请
    METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS 审中-公开
    在铺设过程之后实现平滑侧壁的方法

    公开(公告)号：WO2012154764A3

    公开(公告)日：2013-01-10

    申请号：PCT/US2012036981

    申请日：2012-05-09

    Applicant: LAM RES CORP ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

    Inventor： WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

    IPC: B81C1/00 ,  C23F1/00 ,  H01L21/302

    CPC classification number: H01L21/30655 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3086

    Abstract: A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

    Abstract translation: 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

    PHOTORESIST STRIPPING CHAMBER AND METHODS OF ETCHING PHOTORESIST ON SUBSTRATES
    8.
    发明申请
    PHOTORESIST STRIPPING CHAMBER AND METHODS OF ETCHING PHOTORESIST ON SUBSTRATES 审中-公开
    光电子剥离室和蚀刻基片上的光刻胶的方法

    公开(公告)号：WO2007133413A3

    公开(公告)日：2008-10-30

    申请号：PCT/US2007010115

    申请日：2007-04-25

    Applicant: LAM RES CORP ,  CHEBI ROBERT P ,  WINNICZEK JAROSLAW W ,  MILLER ALAN J ,  LO GLADYS S

    Inventor： CHEBI ROBERT P ,  WINNICZEK JAROSLAW W ,  MILLER ALAN J ,  LO GLADYS S

    IPC: H01L21/26 ,  B44C1/22 ,  H01L21/42

    CPC classification number: H01L21/31138 ,  H01J37/321 ,  H01J2237/3342

    Abstract: Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.

    Abstract translation: 处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域 在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层 包括已经存在于活性区域中的来自添加剂的至少一种元素。

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