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    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：WO2010098538A3

    公开(公告)日：2010-09-02

    申请号：PCT/KR2010/000155

    申请日：2010-01-11

    Applicant: LG ELECTRONICS INC. ,  EO, Youngjoo ,  AHN, Sehwon ,  LEE, Seungyoon

    Inventor： EO, Youngjoo ,  AHN, Sehwon ,  LEE, Seungyoon

    IPC: H01L31/042

    Abstract: A solar cell and a method of manufacturing the same are discussed. The solar cell includes an amorphous silicon layer, and a density of Si-Si bonds in the amorphous silicon layer is 7.48x10 22 /cm 3 to 9.4x10 22 /cm 3 . The method includes forming an electrode on a substrate and depositing amorphous silicon on the substrate in an atmosphere in which a ratio of an amount of hydrogen (H 2 ) gas to an amount of silane (SiH4) gas is 15:1 to 30:1 to form an amorphous silicon layer on the substrate.

    SOLAR CELL
    3.
    发明公开
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：EP2467882A1

    公开(公告)日：2012-06-27

    申请号：EP10810064.5

    申请日：2010-01-11

    Applicant: LG Electronics Inc.

    Inventor： SHIM, Hyunja ,  LEE, Seungyoon ,  YOU, Dongjoo ,  LEE, Heonmin ,  HWANG, Suntae ,  AHN, Sehwon ,  EO, Youngjoo

    IPC: H01L31/042

    CPC classification number: H01L31/03685 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0288 ,  H01L31/03762 ,  H01L31/076 ,  Y02E10/545 ,  Y02E10/548

    Abstract: A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon.

    Abstract translation: 公开了一种太阳能电池。 太阳能电池包括基板，在基板上的第一电极，第二电极以及在第一电极和第二电极之间的光电转换单元。 光电转换单元包括由掺杂有作为杂质的碳（C）和氧（O）中的至少一种作为杂质的非晶硅形成的第一本征（称为i-型）半导体层和由 锗（Ge）掺杂的微晶硅。

    SOLAR CELL
    4.
    发明公开
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：EP3196945A1

    公开(公告)日：2017-07-26

    申请号：EP17152171.9

    申请日：2017-01-19

    Applicant: LG ELECTRONICS INC.

    Inventor： LEE, Seungyoon ,  JI, Kwangsun ,  LEE, Hongcheol ,  HWANG, Sunghyun

    IPC: H01L31/0224 ,  H01L31/0747

    CPC classification number: H01L31/02168 ,  H01L31/02008 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0747 ,  Y02E10/50

    Abstract: A solar cell is disclosed, which includes a crystalline semiconductor substrate of a first conductive type, a front doped layer on a front surface of the semiconductor substrate and forming a hetero junction with the semiconductor substrate, a back doped layer on a back surface of the semiconductor substrate and forming a hetero junction with the semiconductor substrate, a front transparent conductive layer on the front doped layer, a back transparent conductive layer under the back doped layer. One of the front doped layer and the back doped layer has a second conductive type opposite to the first conductive type to form a p-n junction with the semiconductor substrate, and the other of the front doped layer and the back doped layer has the first conductive type. A planar area of the front transparent conductive layer is larger than a planar area of the back transparent conductive layer.

    Abstract translation: 公开了一种太阳能电池，该太阳能电池包括：第一导电类型的晶体半导体衬底，在半导体衬底的前表面上的前掺杂层，并与半导体衬底形成异质结;背面掺杂层，位于 半导体衬底，并与半导体衬底形成异质结，前掺杂层上的前透明导电层，后掺杂层下的后透明导电层。 正面掺杂层和背面掺杂层中的一个具有与第一导电类型相反的第二导电类型以与半导体衬底形成pn结，并且正面掺杂层和背面掺杂层中的另一个具有第一导电类型 。 前透明导电层的平面面积大于后透​​明导电层的平面面积。

    SOLAR CELL
    5.
    发明公开
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：EP3193375A1

    公开(公告)日：2017-07-19

    申请号：EP17151397.1

    申请日：2017-01-13

    Applicant: LG ELECTRONICS INC.

    Inventor： LEE, Hongcheol ,  LEE, Seungyoon ,  JI, Kwangsun ,  CHOI, Minho

    IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/18

    CPC classification number: H01L31/022475 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/50

    Abstract: A solar cell is disclosed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductivity type, a front doped layer located on a front surface of the semiconductor substrate, a back doped layer located on a back surface of the semiconductor substrate, a front transparent conductive layer located on the front doped layer and having a first thickness, a front collector electrode located on the front transparent conductive layer, a back transparent conductive layer located under the back doped layer and having a second thickness, and a back collector electrode located under the back transparent conductive layer. The first thickness of the front transparent conductive layer and the second thickness of the back transparent conductive layer are different from each other, and a sheet resistance of the front transparent conductive layer is less than a sheet resistance of the back transparent conductive layer.

    Abstract translation: 公开了一种太阳能电池。 该太阳能电池包括含有第一导电类型的杂质的晶体半导体衬底，位于半导体衬底的前表面上的前掺杂层，位于半导体衬底的后表面上的后掺杂层，位于半导体衬底的后表面上的前透明导电层 在正面掺杂层上并且具有第一厚度，位于正面透明导电层上的前集电极，位于背面掺杂层下面且具有第二厚度的背面透明导电层以及位于背面背面下面的背面集电极透明 导电层。 前透明导电层的第一厚度与后透明导电层的第二厚度彼此不同，且前透明导电层的薄层电阻小于后透明导电层的薄层电阻。

    THIN FILM SOLAR CELL MODULE
    7.
    发明公开
    THIN FILM SOLAR CELL MODULE 审中-公开
    薄膜太阳能电池模块

    公开(公告)号：EP2993702A3

    公开(公告)日：2016-06-01

    申请号：EP15002834.8

    申请日：2012-07-31

    Applicant: LG Electronics, Inc.

    Inventor： HWANG, Suntae ,  YOU, Dongjoo ,  LEE, Sungeun ,  LEE, Seungyoon

    IPC: H01L31/042 ,  H01L31/075 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0352 ,  H01L31/046

    CPC classification number: H01L31/1804 ,  H01L31/0352 ,  H01L31/03765 ,  H01L31/046 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: A thin film solar cell module includes a substrate, at least one first cell positioned in a central area of the substrate, and at least one second cell positioned in an edge area of the substrate. Each of the first and second cells includes a first electrode, a second electrode, and at least one photoelectric conversion unit positioned between the first electrode and the second electrode. An amount of germanium contained in the photoelectric conversion unit of the first cell is less than an amount of germanium contained in the photoelectric conversion unit of the second cell positioned on the same level layer as the photoelectric conversion unit of the first cell.

    Abstract translation: 薄膜太阳能电池模块包括基板，位于基板的中心区域中的至少一个第一单元以及位于基板的边缘区域中的至少一个第二单元。 第一和第二单元中的每一个包括第一电极，第二电极以及位于第一电极和第二电极之间的至少一个光电转换单元。 包含在第一单元的光电转换单元中的锗的量小于包含在与第一单元的光电转换单元位于相同层级上的第二单元的光电转换单元中的锗的量。

    SOLAR CELL
    9.
    发明公开
    SOLAR CELL 审中-公开

    公开(公告)号：EP3324447A1

    公开(公告)日：2018-05-23

    申请号：EP17210606.4

    申请日：2017-01-13

    Applicant: LG Electronics Inc.

    Inventor： LEE, Hongcheol ,  LEE, Seungyoon ,  JI, Kwangsun ,  CHOI, Minho

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022475 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02P70/521

    Abstract: A solar cell is disclosed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductivity type, a front doped layer located on a front surface of the semiconductor substrate, a back doped layer located on a back surface of the semiconductor substrate, a front transparent conductive layer located on the front doped layer and having a first thickness, a front collector electrode located on the front transparent conductive layer, a back transparent conductive layer located under the back doped layer and having a second thickness, and a back collector electrode located under the back transparent conductive layer. The first thickness of the front transparent conductive layer and the second thickness of the back transparent conductive layer are different from each other, and a sheet resistance of the front transparent conductive layer is less than a sheet resistance of the back transparent conductive layer.

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