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    SOLAR CELL
    1.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：WO2011027951A1

    公开(公告)日：2011-03-10

    申请号：PCT/KR2010/000156

    申请日：2010-01-11

    Applicant: LG ELECTRONICS INC. ,  LEE, Hongcheol ,  MOON, Seyoun ,  AHN, Sehwon ,  YOU, Dongjoo

    Inventor： LEE, Hongcheol ,  MOON, Seyoun ,  AHN, Sehwon ,  YOU, Dongjoo

    IPC: H01L31/042

    CPC classification number: H01L31/075 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/076 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548

    Abstract: A solar cell is discussed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and at least one photoelectric transformation unit positioned between the first electrode and the second electrode. The at least one photoelectric transformation unit includes a p-type semiconductor layer, an intrinsic (i-type) semiconductor layer, an n-type semiconductor layer, and a buffer layer positioned between the p-type semiconductor layer and the i-type semi-conductor layer. A hydrogen content of the buffer layer is more than a hydrogen content of the i-type semiconductor layer.

    Abstract translation: 讨论太阳能电池。 太阳能电池包括衬底，衬底上的第一电极，第二电极和位于第一电极和第二电极之间的至少一个光电转换单元。 所述至少一个光电转换单元包括p型半导体层，本征（i型）半导体层，n型半导体层和位于p型半导体层和i型半导体层之间的缓冲层 导体层。 缓冲层的氢含量大于i型半导体层的氢含量。

    THIN FILM SOLAR CELL
    2.
    发明申请
    THIN FILM SOLAR CELL 审中-公开
    薄膜太阳能电池

    公开(公告)号：WO2013151294A1

    公开(公告)日：2013-10-10

    申请号：PCT/KR2013/002707

    申请日：2013-04-02

    Applicant: LG ELECTRONICS INC.

    Inventor： KIM, Soohyun ,  LEE, Hongcheol ,  CHUNG, Jinwon ,  AHN, Sehwon

    IPC: H01L31/075 ,  H01L31/042

    CPC classification number: H01L31/03685 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/545 ,  Y02E10/548

    Abstract: A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx).

    Abstract translation: 薄膜太阳能电池包括位于基板的一个表面上的基板，第一电极和第二电极以及位于第一电极和第二电极之间的光电转换单元。 光电转换单元包括多个光电转换层，每个光电转换层包括p型半导体层，i型半导体层和n型半导体层。 多个光电转换层中的至少一个p型半导体层含有微晶硅（mc-Si）和非晶氧化硅（a-SiOx）。

    THIN FILM SOLAR CELL
    6.
    发明公开
    THIN FILM SOLAR CELL 有权
    薄膜太阳能电池

    公开(公告)号：EP2834856A1

    公开(公告)日：2015-02-11

    申请号：EP13772759.0

    申请日：2013-04-02

    Applicant: LG Electronics Inc.

    Inventor： KIM, Soohyun ,  LEE, Hongcheol ,  CHUNG, Jinwon ,  AHN, Sehwon

    IPC: H01L31/075 ,  H01L31/042

    CPC classification number: H01L31/03685 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/545 ,  Y02E10/548

    Abstract: A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx).

    Abstract translation: 薄膜太阳能电池包括基板，位于基板的一个表面上的第一电极和第二电极以及位于第一电极和第二电极之间的光电转换单元。 光电转换单元包括多个光电转换层，每个光电转换层包括p型半导体层，i型半导体层和n型半导体层。 多个光电转换层中的至少一个p型半导体层包含微晶硅（mc-Si）和非晶氧化硅（a-SiOx）。

    SOLAR CELL
    10.
    发明公开
    SOLAR CELL 审中-公开

    公开(公告)号：EP3324447A1

    公开(公告)日：2018-05-23

    申请号：EP17210606.4

    申请日：2017-01-13

    Applicant: LG Electronics Inc.

    Inventor： LEE, Hongcheol ,  LEE, Seungyoon ,  JI, Kwangsun ,  CHOI, Minho

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022475 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02P70/521

    Abstract: A solar cell is disclosed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductivity type, a front doped layer located on a front surface of the semiconductor substrate, a back doped layer located on a back surface of the semiconductor substrate, a front transparent conductive layer located on the front doped layer and having a first thickness, a front collector electrode located on the front transparent conductive layer, a back transparent conductive layer located under the back doped layer and having a second thickness, and a back collector electrode located under the back transparent conductive layer. The first thickness of the front transparent conductive layer and the second thickness of the back transparent conductive layer are different from each other, and a sheet resistance of the front transparent conductive layer is less than a sheet resistance of the back transparent conductive layer.

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