Method of forming ion sensors
    2.
    发明授权

    公开(公告)号:US12140557B2

    公开(公告)日:2024-11-12

    申请号:US17267772

    申请日:2019-08-16

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; sputtering the sensor surface with a noble gas to at least partially remove the native oxide from the sensor surface; and annealing the sensor surface in a hydrogen atmosphere.

    Method for making a well disposed over a sensor

    公开(公告)号:US11004690B2

    公开(公告)日:2021-05-11

    申请号:US16687630

    申请日:2019-11-18

    Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

Patent Agency Ranking