MICRO HEMISPHERIC RESONATOR GYRO
    1.
    发明申请
    MICRO HEMISPHERIC RESONATOR GYRO 审中-公开
    微型HEMISPHERIC共振器GYRO

    公开(公告)号:WO2009017623A1

    公开(公告)日:2009-02-05

    申请号:PCT/US2008/008875

    申请日:2008-07-22

    CPC classification number: G01C19/5691 G01C25/00 Y10T74/1275

    Abstract: One embodiment is a micro hemispheric resonator gyro having: a plurality of pickoff and forcer electrodes; a hemispheric resonator; a guard ring having first and second opposed sides, the guard ring containing the plurality of pickoff and forcer electrodes, and the hemispheric resonator; a top cover operatively coupled to the first side of the guard ring; and a bottom cover operatively coupled to the second side of the guard ring; wherein the plurality of pickoff and forcer electrodes, the hemispheric resonator, the guard ring, the top cover and the bottom cover form a micro hemispheric resonator gyro.

    Abstract translation: 一个实施例是一种微半球谐振器陀螺仪,具有:多个拾取和锻造电极; 半球谐振器; 保护环具有第一和第二相对侧,保护环包含多个拾取和锻造电极以及半球谐振器; 顶盖,可操作地联接到防护环的第一侧; 以及底盖,其可操作地联接到所述保护环的第二侧; 其中所述多个拾取和锻造电极,半球谐振器,保护环,顶盖和底盖形成微半球谐振器陀螺仪。

    LOW COST INFRARED CAMERA
    2.
    发明申请
    LOW COST INFRARED CAMERA 审中-公开
    低成本红外摄像机

    公开(公告)号:WO2002063872A1

    公开(公告)日:2002-08-15

    申请号:PCT/US2001/042605

    申请日:2001-10-11

    CPC classification number: H04N5/33 G08B13/193

    Abstract: An infrared camera apparatus having a primary mirror assembly formed in a first molded plastic housing; and, a secondary mirror assembly formed in a second molded plastic housing and disposed in front of and in optical alignment with the primary mirror assembly for collecting an image. The first and secnd housing snap together for assembly of the camera. A focal plane array is disposed in optical alignment with the primary and secondary mirrors for receiving an image focused thereon by the secondary mirror. A substrate is added for supporting the focal plane array and system electronics, which are responsve to images formed on the focal plane array.

    Abstract translation: 一种具有形成在第一模制塑料壳体中的主镜组件的红外相机装置; 以及形成在第二模制塑料壳体中并且设置在主反射镜组件的前面并与之对准的用于收集图像的次级反射镜组件。 第一个和第二个壳体卡在一起用于组装相机。 焦平面阵列与初级和次级反射镜光学对准设置,用于接收由次级反射镜聚焦在其上的图像。 添加基板以支持焦平面阵列和系统电子装置,其响应于在焦平面阵列上形成的图像。

    MICROMACHINED SILICON GYRO USING TUNED ACCELEROMETER
    3.
    发明申请
    MICROMACHINED SILICON GYRO USING TUNED ACCELEROMETER 审中-公开
    使用调谐加速度计的MICROMACHINED SILICON GYRO

    公开(公告)号:WO2002063242A1

    公开(公告)日:2002-08-15

    申请号:PCT/US2001/042695

    申请日:2001-10-11

    CPC classification number: G01C19/56

    Abstract: A micromachined silicon tuned accelerometer gyro is formed out of silicon wafers, by micromachining. The top and bottom cover which include driver, forcer, tuning and guard ring elements mounted therein are micromachined in arrays on silicon-on-insulator (SOI) wafers. The center (driver and sensing) element between the top and bottom is micromachined in an array of four inch diameter silicon wafers. The driver and sensing structure is a tuned pendulum attached by flexure joints to a vibrating structure which is suspended by a parallelogram dither suspension. The pendulum is tuned by adjusting the magnitude of a d.c. signal to match the natural frequency of the pendulum to the natural frequency of the vibrating structure. The dither suspension flexures of the vibrating structure is uniquely defined and easily machined but yet provides a dither suspension that restrains the vibrating structure within its vibrating plane with no harmonic distortion.

    Abstract translation: 通过微加工,由硅晶片形成微加工硅调谐加速度计陀螺仪。 安装在其中的包括驱动器,锻造器,调节和保护环元件的顶盖和底盖在绝缘体上硅(SOI)晶片上以阵列的形式被微机械加工。 顶部和底部之间的中心(驱动器和感测)元件以四英寸直径的硅晶片的阵列进行微加工。 驾驶员和感测结构是由弯曲接头附接到由平行四边形抖动悬架悬挂的振动结构的调谐摆。 通过调整直流电压的大小来调节钟摆。 信号将摆锤的固有频率与振动结构的固有频率相匹配。 振动结构的抖动悬架弯曲是唯一限定的并且容易加工,但是还提供了一种抖动悬架,其将振动结构限制在其振动平面内,没有谐波失真。

    BI-STABLE MICRO-ACTUATOR AND OPTICAL SWITCH
    4.
    发明申请

    公开(公告)号:WO2002068319A3

    公开(公告)日:2002-09-06

    申请号:PCT/US2001/042606

    申请日:2001-10-11

    Abstract: A bi-stable micro-actuator is formed from a first and a second silicon-on-insulator wafer fused together at an electrical contact layer. A cover has a V-groove that defines an optical axis. A collimated optical signal source in the V-groove couples an optical signal to an optical port in the V-groove. A mirror surface on the transfer member blocks or reflects the optical signal. The transfer member has a point of support at the first and second end. The central portion of the transfer member carrying a mirror is displaced from the compressive axis with transfer member in a bowed first or second state. The mirror blocks or reflects the optical axis. An expandable structure applies a compressive force between the first and second point of support along the compressive axis to hold the transfer member in a bowed first state or a bowed second state. A control signal is applied to a heating element in the expandable structure to reduce the compressive force transferring the transfer member to a second state. The central portion of the transfer member moves from a bowed first state past the compressive axis into a bowed second state to clear the optical axis.

    MICRO-MECHANICAL INERTIAL SENSORS
    5.
    发明公开
    MICRO-MECHANICAL INERTIAL SENSORS 审中-公开
    MIKROMECHANISCHER INERTIRA传感器

    公开(公告)号:EP1456673A2

    公开(公告)日:2004-09-15

    申请号:EP00955912.1

    申请日:2000-07-05

    Abstract: Micromechanical inertial sensors are formed of a plurality of substantially-planar semiconductor wafers (18, 22, 26, 30, 32) interspersed with oxide layers (34, 36, 36', 38, 38', 40). The sensitive element (42) is located within an internal aperture (20) of a wafer (18) of the device and is separate therefrom. It is connected to an overlying oxide layer at pedestals (44, 46) that minimize contact area to thereby reduce stray capacitance. Portions of side edges of the various wafers (18, 22, 26, 30, 32) are successively recessed to create topside-exposed wafer sections that permit the grounding of all exposed portions of the device as operational potentials are applied to internal electrodes (14, 16) and sensitive elements.

    BI-STABLE MICRO-ACTUATOR AND OPTICAL SWITCH
    7.
    发明公开
    BI-STABLE MICRO-ACTUATOR AND OPTICAL SWITCH 审中-公开
    双稳态微致动器和光开关

    公开(公告)号:EP1363850A2

    公开(公告)日:2003-11-26

    申请号:EP01977942.0

    申请日:2001-10-11

    Abstract: A bi-stable micro-actuator is formed from a first and a second silicon-on-insulator wafer fused together at an electrical contact layer. A cover has a V-groove that defines an optical axis. A collimated optical signal source in the V-groove couples an optical signal to an optical port in the V-groove. A mirror surface on the transfer member blocks or reflects the optical signal. The transfer member has a point of support at the first and second end. The central portion of the transfer member carrying a mirror is displaced from the compressive axis with transfer member in a bowed first or second state. The mirror blocks or reflects the optical axis. An expandable structure applies a compressive force between the first and second point of support along the compressive axis to hold the transfer member in a bowed first state or a bowed second state. A control signal is applied to a heating element in the expandable structure to reduce the compressive force transferring the transfer member to a second state. The central portion of the transfer member moves from a bowed first state past the compressive axis into a bowed second state to clear the optical axis.

    MICRO-MECHANICAL SEMICONDUCTOR ACCELEROMETER
    8.
    发明公开
    MICRO-MECHANICAL SEMICONDUCTOR ACCELEROMETER 有权
    MICRO机械半导体加速度传感器

    公开(公告)号:EP1019733A1

    公开(公告)日:2000-07-19

    申请号:EP99937439.0

    申请日:1999-07-22

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0828

    Abstract: A precision, micro-mechanical semiconductor accelerometer of the differential-capacitor type comprises a pair of etched opposing cover layers fusion bonded to opposite sides of an etched proofmass layer to form a hermetically sealed assembly. The cover layers are formed from commercially available, Silicon-On-Insulator ('SOI') wafers to significantly reduce cost and complexity of fabrication and assembly. The functional semiconductor parts of the accelerometer are dry-etched using the BOSCH method of reactive ion etching ('RIE'), thereby significantly reducing contamination inherent in prior art wet-etching processes, and resulting in features advantageously bounded by substantially vertical sidewalls.

    MICRO HEMISPHERIC RESONATOR GYRO
    9.
    发明公开
    MICRO HEMISPHERIC RESONATOR GYRO 有权
    微型半球形谐振器陀螺仪

    公开(公告)号:EP2171398A1

    公开(公告)日:2010-04-07

    申请号:EP08794620.8

    申请日:2008-07-22

    CPC classification number: G01C19/5691 G01C25/00 Y10T74/1275

    Abstract: One embodiment is a micro hemispheric resonator gyro having: a plurality of pickoff and forcer electrodes; a hemispheric resonator; a guard ring having first and second opposed sides, the guard ring containing the plurality of pickoff and forcer electrodes, and the hemispheric resonator; a top cover operatively coupled to the first side of the guard ring; and a bottom cover operatively coupled to the second side of the guard ring; wherein the plurality of pickoff and forcer electrodes, the hemispheric resonator, the guard ring, the top cover and the bottom cover form a micro hemispheric resonator gyro.

    Abstract translation: 一个实施例是微型半球形谐振器陀螺仪,其具有:多个传感器电极和挤压器电极; 一个半球形谐振器; 具有第一和第二相对侧的保护环,所述保护环包含所述多个拾取和挤压电极以及所述半球谐振器; 可操作地联接到护环的第一侧的顶盖; 以及可操作地联接到护环的第二侧的底盖; 其中所述多个拾取和推压电极,所述半球谐振器,所述保护环,所述顶盖和所述底盖形成微型半球谐振器陀螺仪。

    MICRO-MECHANICAL SEMICONDUCTOR ACCELEROMETER
    10.
    发明授权
    MICRO-MECHANICAL SEMICONDUCTOR ACCELEROMETER 有权
    MICRO机械半导体加速度传感器

    公开(公告)号:EP1019733B1

    公开(公告)日:2005-06-15

    申请号:EP99937439.0

    申请日:1999-07-22

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0828

    Abstract: A precision, micro-mechanical semiconductor accelerometer of the differential-capacitor type comprises a pair of etched opposing cover layers fusion bonded to opposite sides of an etched proofmass layer to form a hermetically sealed assembly. The cover layers are formed from commercially available, Silicon-On-Insulator ("SOI") wafers to significantly reduce cost and complexity of fabrication and assembly. The functional semiconductor parts of the accelerometer are dry-etched using the BOSCH method of reactive ion etching ("RIE"), thereby significantly reducing contamination inherent in prior art wet-etching processes, and resulting in features advantageously bounded by substantially vertical sidewalls.

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