公开(公告)号：JP2001148349A

公开(公告)日：2001-05-29

申请号：JP2000286248

申请日：2000-09-21

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ANSELM KLAUS ALEXANDER ,  CHO ALFRED Y ,  CHU SUNG-NEE GEORGE

IPC: C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L21/308 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a group III compound area selectively using a masking layer to grow group III nitride of a single crystal and group III nitride material of a polycrystal at different growing speeds. SOLUTION: An epitaxial process is selected to conduct a vertical growth so as to transfer the edge of a mask at a designated limit for a selected region. The polycrystal material (grown on a mask layer) can be removed by using an etchant for selectively etching group III nitride material of the polycrystal and the single crystal. In this case, the group III nitride of the single crystal (grown on the exposed substrate material) remains without being removed as it is.

公开(公告)号：JP2000068611A

公开(公告)日：2000-03-03

申请号：JP22549899

申请日：1999-08-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ANSELM KLAUS ALEXANDER ,  BAILLARGEON JAMES NELSON ,  CHO ALFRED Y

IPC: H01S5/343 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To reduce temperature dependency of laser characteristics by a method wherein numerous barriers include at least one doped barrier layer and it is insulated from an adjacent quantum well layer by an undoped barrier layer. SOLUTION: An active region includes numerous N-times repeated units 12 laminated between internal clads 20, 22 wherein each repeated unit includes a quantum well region adjacent to a barrier region 12.5. An active region of an MQW laser is modified so that each barrier region 12.5 includes numerous barrier layers. Among numerous barrier regions respectively, one barrier layer 12.3 is doped, while other two spacer barrier layers 12.2, 12.4 are undoped, whereby the doped barrier layer 12.3 is insulated from an adjacent quantum well region 12.1. The doped barrier layer 12.3 is preferably a thin delta-doped layer. On the other hand, the spacer barrier layers serve to essentially prevent a part of dopant atoms from diffusing into a quantum well.