公开(公告)号：JP2000138420A

公开(公告)日：2000-05-16

申请号：JP21262699

申请日：1999-07-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  FAIST JEROME ,  SIRTORI CARLO

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To constitute a guide mode of a surface plasmon propagated along a light guide interface by forming the interface between the materials having permittivity of opposite signs in a clad area. SOLUTION: A long-wavelength semiconductor laser 10 is composed of an active area 12 and at least one guide interface 14. The interface 14 is based on a surface plasmon. The interface 14 is formed of a pair of layers 14.1 and 14.2 having permittivity of opposite signs. For example, the layer 14.1 is formed of a semiconductor having a positive permittivity and the layer 14.2 is formed of a metal having a negative permittivity. The guide mode in the active area 12 is supported at least partly by an electromagnetic surface wave (surface plasmon) at the metal-semiconductor interface 14. Since the amplification of light waves exponentially decreases in two directions perpendicular to the interface 14, no additional clad layer is required.

公开(公告)号：JP2001148349A

公开(公告)日：2001-05-29

申请号：JP2000286248

申请日：2000-09-21

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ANSELM KLAUS ALEXANDER ,  CHO ALFRED Y ,  CHU SUNG-NEE GEORGE

IPC: C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L21/308 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a group III compound area selectively using a masking layer to grow group III nitride of a single crystal and group III nitride material of a polycrystal at different growing speeds. SOLUTION: An epitaxial process is selected to conduct a vertical growth so as to transfer the edge of a mask at a designated limit for a selected region. The polycrystal material (grown on a mask layer) can be removed by using an etchant for selectively etching group III nitride material of the polycrystal and the single crystal. In this case, the group III nitride of the single crystal (grown on the exposed substrate material) remains without being removed as it is.

公开(公告)号：JP2000012983A

公开(公告)日：2000-01-14

申请号：JP16456299

申请日：1999-06-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHI CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To easily transport a large quantity of electrons through the injector of an injector region in each repeated unit having the injector region and an active area by sympathetically vibrating the low energy level of one active region with the high energy level of its downstream-side adjacent active area. SOLUTION: A quantum cascade laser 10 is composed of an InP substrate 11, a lower optically immobilized region 12, a waveguide core region 13, an upper optically immobilized area 14, and upper and lower contacts 15 and 16 with which the laser 10 is electrically brought into contact. The waveguide core region 13 is provided with many similar repeated units and each repeated unit is provided with an injector region and an active region. The injector region is made to sympathetically vibrate the lower energy level in the active region with the high energy level of the active region of its directly adjacent repeated unit on the downstream side under an appropriate electric bias, and the movement of charge carriers is carried out easily by selecting the quantum well layer and/or barrier layer of the injector region.

公开(公告)号：JPH11284287A

公开(公告)日：1999-10-15

申请号：JP31153598

申请日：1998-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a device for mounting a double wavelength quantum cascade photon source. SOLUTION: A quantum cascade(QC) photon source has two different wavelengths which are both medium infrared rays normally which can be released at the same time. This can be realized by a structure of semiconductor layers in which electrons are injected into an energy level E3 and then are forcefully cascade connected to an inter medium level E2 before they reach a ground state E1 in an operation area. In these operations, photons of energy E3 -E2 (wavelength λ1 ) and E2 -E1 (wavelength λ2 ) are released. The double wavelength photon source according to the present invention can be used for various purposes, for example, for determining absorption amount of gas sample at wavelengths λ1 and λ2 and generally for determining density of a specified chemical compound in a sample.

公开(公告)号：JPH11266062A

公开(公告)日：1999-09-28

申请号：JP1425799

申请日：1999-01-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  CHU SUNG-NEE GEORGE ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE

IPC: H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a laser which can be used advantageously for absorption spectroscopy, such as emission monitoring. SOLUTION: A quantum cascaded(QC) laser is equipped with a multilayered core region composed of first semiconductor material layers and second semiconductor material layers, which are possessed of lattice constants a1 and a2 which are respectively and alternately arranged. The first material layer is so selected as to make its lattice constant a1 satisfy a1 >a0 [a0 denotes a lattice constant of a substrate (typically InP)], and the second material layer is so selected as to make its lattice constant a2 satisfy a2 >a0 . The materials of these layers are so selected as to satisfy |ΔEc |>520 meV, wherein ΔEc denotes the conduction band gap between the first and second material layer. The multilayered core is equipped with plural multilayer repeated units which are substantially the same. The material and thickness of the repeated unit are so selected as to provide a distortion correction for the repeat unit. It is preferable that a QC laser of this invention be equipped with a distributed feedback mechanism (e.g. Bragg lattice) so selected as to ensure the QC laser of the emission of single mode laser beams, and the QC laser can be designed so as to operate on a first atmospheric window wavelength of typically about 3 to 5 μm.

公开(公告)号：JP2002076516A

公开(公告)日：2002-03-15

申请号：JP2001205754

申请日：2001-07-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHI CLAIRE F ,  HUTCHINSON ALBERT LEE ,  HWANG HAROLD YOONSUNG ,  PAIELLA ROBERTO ,  SERGENT ARTHUR M ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To provide ability for finely controlling a central wavelength through waveguide coating without introducing a loss or non-linear refraction factor significant for dielectric materials or waveguide process having a low absorption rate within an intermediate IR range, and having high insulation durability for enabling high-power/high-temperature operation in ISB laser technology, through low loss mesa dielectric coating for providing efficient heat conduction through the side wall of mesa, by laterally sealing light without increasing threshold current density for lasing and further through low loss coating on a comparatively narrow mesa. SOLUTION: In a mesa structure semiconductor laser 10, a stripe structure contact 18 is specified on the top of the mesa, and patterned dielectric coating to be used for providing significant waveguide property contains chalcogenide glass 16. Especially, the application to an inter-sub-band (quantum cascade, for example,) is described.

公开(公告)号：JP2000068611A

公开(公告)日：2000-03-03

申请号：JP22549899

申请日：1999-08-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ANSELM KLAUS ALEXANDER ,  BAILLARGEON JAMES NELSON ,  CHO ALFRED Y

IPC: H01S5/343 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To reduce temperature dependency of laser characteristics by a method wherein numerous barriers include at least one doped barrier layer and it is insulated from an adjacent quantum well layer by an undoped barrier layer. SOLUTION: An active region includes numerous N-times repeated units 12 laminated between internal clads 20, 22 wherein each repeated unit includes a quantum well region adjacent to a barrier region 12.5. An active region of an MQW laser is modified so that each barrier region 12.5 includes numerous barrier layers. Among numerous barrier regions respectively, one barrier layer 12.3 is doped, while other two spacer barrier layers 12.2, 12.4 are undoped, whereby the doped barrier layer 12.3 is insulated from an adjacent quantum well region 12.1. The doped barrier layer 12.3 is preferably a thin delta-doped layer. On the other hand, the spacer barrier layers serve to essentially prevent a part of dopant atoms from diffusing into a quantum well.

公开(公告)号：JPH1065276A

公开(公告)日：1998-03-06

申请号：JP8901497

申请日：1997-04-08

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES N ,  CHO ALFRED Y ,  CHU SUNG-NEE G ,  HWANG WEN-YEN

IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To establish a reproducible process by heating a semiconductor body up to a mass transferring temperature in a vacuum chamber, and exposing the patternized main surface for a specified time during which a change in shape, characterized by nonplanar surfaces, of a P-flux from a solid P-flux source occurs by mass transfer. SOLUTION: The directions of the grooves of a grating 10, formed by etching on the surface (100) 11 of an InP wafer, are parallel to the direction [0-11], and they are about 60nm deep, has sharp sidewalls and sharp corners, and induce grating strains, so they are smoothed (mass-transferred). When the grating 10 is heated at 480 deg.C for five minutes under a P-flux (from a solid source) of 4×10 Torr, sharp characteristic portions are rounded and their depth is reduced to 30nm. Since low-temperature treatment is used through an As source is used as an option at this time, it becomes possible to reduce the diffusion of dopants, and to establish a repeatable process. Furthermore, it enables inducing thermal oxidation desorption and producing molecularly clean surfaces.

公开(公告)号：JP2000151026A

公开(公告)日：2000-05-30

申请号：JP29898099

申请日：1999-10-21

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01L33/00 ,  H01S5/34 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To make effective inductive radiation in a plurality of wave lengths by making an energy interval of a central wave length larger than a line spreading energy of the first and the second whichever larger, and by providing a means of preventing buffering of electrons from a fourth level to a third level. SOLUTION: For example, a lower mini band 1 has a first and a second energy levels and an upper mini band 2 has a third and a fourth levels. Light is generated by a first autonomous radioactive ray having a central wave length λ1 and a first line spreading energy caused by an electron transition between the fourth and the first levels. Further, light is generated by a second autonomous radioactive ray having a central wave length λ2 and a second line spreading energy caused by an electron transition between the third and the second levels. An energy interval of the central wave length is larger than a larger line spreading energy of the first and the second and a means of preventing of a buffering of electrons from the fourth level to the third level.

公开(公告)号：JP2000101201A

公开(公告)日：2000-04-07

申请号：JP26801999

申请日：1999-09-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To prebias an actual electronic potential by changing an SL cycle so as to make flat band conditions in the upper and lower mini-bands. SOLUTION: A semiconductor optical emitter 10 with a quantum cascade superlattice(QCSL) is provided with an upper clad area 16 and an active area 14 working as a lower clad area between the upper clad area 16 and a substrate 12. An insulation layer 18 is formed on the uppermost area of a device, and an opening is formed to expose a part of the uppermost area of a mesa by patterning. A first electrode 20 is formed in the opening in a manner that it is in contact with the insulation layer 18 and the upper clad area, and a second electrode 22 is formed on the substrate 12. A drive circuit is connected between the electrodes 20 and 22 so as to supply to a laser a pumping energy to generate light. The emitter 10 works as an incoherent natural radiation source at the threshold or less, while it works as a coherent stimulus radiation source at the threshold or more. In the case of the latter, when a feedback is given, the light source functions as a laser.