ARTICLE COMPRISING VERTICALLY NANO-INTERCONNECTED CIRCUIT DEVICE AND METHOD FOR MAKING THE SAME

    公开(公告)号:JP2002141633A

    公开(公告)日:2002-05-17

    申请号:JP2000324945

    申请日:2000-10-25

    Abstract: PROBLEM TO BE SOLVED: To provide an equi-length nanowire and a circuit device vertically interconnected by the nanowire. SOLUTION: This vertically interconnected circuit device is provided. The circuit device has at least two circuit layers, and a plurality of equi-length nanowires arranged between the circuit layers. The nanowires comprise composites having a heterojunction present along the length thereof to provide for a variety of device applications. This method for making the circuit device includes a step for growing the plurality of nanowires on a removable substrate (a), a step for equalizing the length of the nanowires and for making the length of each of the plurality of nanowires nearly equal (b), a step for transferring and joining exposed ends of the plurality of nanowires to a first circuit layer (c), and a step for removing the substrate (d). The nanowire joined to the first circuit layer is further joined to a second one, thus forming the vertically interconnected circuit device.

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