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公开(公告)号:JP2001177052A
公开(公告)日:2001-06-29
申请号:JP2000325116
申请日:2000-10-25
Applicant: LUCENT TECHNOLOGIES INC
Inventor: WALTER L BROWN , JIN SUNGHO , ZHU WEI
IPC: H01L25/18 , H01L21/98 , H01L23/498 , H01L23/52 , H01L23/538 , H01L25/065 , H01L25/07 , H01L29/06
Abstract: PROBLEM TO BE SOLVED: To provide a method for interconnection at the original position whereby nano-wires are grown and formed at the original position on each of circuit boards to create a structure of the interconnected nano-wires on each circuit board. SOLUTION: Two parallel circuit boards 10, 10' are disposed with a fixed space (g), and catalyst nucleus forming layer 26 for selectively growing the nano-wires 14 are provided on pad surfaces with contact pads 12a, 12a' facing those 12b, 12b'. The nano-wires 14 grow to the mutually opposite sides to attain the interconnection at the original position.
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公开(公告)号:JP2001052595A
公开(公告)日:2001-02-23
申请号:JP2000188555
申请日:2000-06-23
Applicant: LUCENT TECHNOLOGIES INC
Inventor: JIN SUNGHO , KATSAP VICTOR , WASKIEWICZ WARREN K , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide a cathode having an improved work function and a manufacturing method therefor. SOLUTION: This cathode 110 having an improved work function for a lithography system such as a 'SCALPEL(R)' system has a buffer between a substrate 112 and an emission layer 116. The buffer transforms, randomizes, miniaturizes and/or separates a particle structure in a surface of the substrate 112 to reduce a particle diameter, randomize crystal orientation and reduce a crystal growth rate. The buffer la can be composed of a solid solution or multiphase alloy.
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3.
公开(公告)号:JP2000223004A
公开(公告)日:2000-08-11
申请号:JP2000015644
申请日:2000-01-25
Applicant: LUCENT TECHNOLOGIES INC
Inventor: JIN SUNGHO , KOCHANSKI GREGORY PETER , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide adhesiveness and a stable structure, and to relatively facilitate manufacture, by projecting at least a part of nano-tubes from the surface of a composite material and setting average projection two times higher than the average diameter of the nano-tube in the composite material. SOLUTION: Carbon nano-tubes 10 and conductive metal powder 12 are prepared, and are actually mixed as uniform as possible, and an obtained composite material is pressed into a green compact 14. An ingot is cut in parallel with an intended emitter surface, or a composite material layer is polished and removed from an ingot surface to expose many nano-tubes 16. A metal layer is removed with edges from the surface of the cut ingot 17 to provide many projecting nano-tubes 16. In this case, length of the projections is two times longer than an average diameter of the nano-tubes, and more preferably 10 times longer than the average diameter.
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公开(公告)号:JP2000199049A
公开(公告)日:2000-07-18
申请号:JP22897699
申请日:1999-08-13
Applicant: LUCENT TECHNOLOGIES INC
Inventor: DU HONGHUA , GRAEBNER JOHN EDWIN , JIN SUNGHO , JOHNSON DAVID WILFRED JR , ZHU WEI
IPC: H01L41/187 , C23C14/08 , C23C16/40 , H01L41/24
Abstract: PROBLEM TO BE SOLVED: To provide a device which is capable of easily forming an oriented Perovskite layer to show the specified piezoelectric coefficient by depositing a template layer on a substrate of diamond, etc., by a vapor phase deposition method, and depositing a lead zirconate titanate layer thereon by the vapor phase deposition method. SOLUTION: A template layer is deposited on a substrate formed of diamond, silicon, platinum-covered material, etc., by a physical or chemical vapor phase deposition method. The template layer is preferably formed of lead titanate, strontium titanate, barium titanate, etc., of about 0.06-0.12 μm in thickness. A lead zirconate titanate(PZT) layer is deposited thereon by the physical or chemical deposition method. The PZT layer has the dielectric constant of about 500-650 at 1 V and 100 kHz, and is preferably formed to be about 0.1-10 μm in thickness. The PZT layer easily forms an oriented Perovskite layer of about 50×10-12 to 350×10-12 m/V in piezoelectric coefficient through the template layer of Perovskite structure.
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公开(公告)号:JP2001167692A
公开(公告)日:2001-06-22
申请号:JP2000317257
申请日:2000-10-18
Applicant: LUCENT TECHNOLOGIES INC
Inventor: FILAS ROBERT WILLIAM , JIN SUNGHO , GERGORY P KOCHANSKI , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide an improved process of manufacturing an emitter structure from nano wires. SOLUTION: In an embodiment, at least partially coated nanowires other than magnetic materials are provided. The nanowires have an average length of about 0.1 μm to about 10,000 μm. The nanowares are mixed into a liquid medium, and a magnetic field is applied to position the nanowires. The liquid medium contains precursor materials, such as conductive particles or metal salts or the like, which can be consolidated into a solid matrix. To the matrix are fixed the nanowires in a positioned direction. A portion of the positioned nanowires is exposed, for example, by etching of the surface portion of the matrix material, thereby providing the desired protrusion of the top of the nanowires.
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公开(公告)号:JP2001130904A
公开(公告)日:2001-05-15
申请号:JP2000247135
申请日:2000-08-17
Applicant: LUCENT TECHNOLOGIES INC
Inventor: ZHOU OTTO , BOWER CHRISTOPHER A , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a patterned carbon nanotube thin film. SOLUTION: This method for manufacturing the adhered patterned carbon nanotube thin film is realized. According to the present invention, a substrate is patterned with a carbide-forming material, a carbon-dissolving material or a low melting point metal. Then, carbon nanotubes are deposited, onto the patterned substrate, but have relatively, poor adhesion to the substrate material or the pattern-forming materials. The substrate is subsequently annealed typically in vacuo at a temperature dependent on the particular patterning material, such as a carbide-forming temperature, a carbon-dissolution temperature or a low melting point metal-melting temperature. By the annealing, an adhesive nanotube thin film is formed over the patterned regions, while the nanotubes deposited on the non-patterned regions are easily removed, for example, by blowing, rubbing, brushing or ultrasonication in a solvent such as methanol.
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公开(公告)号:JP2000223572A
公开(公告)日:2000-08-11
申请号:JP2000015643
申请日:2000-01-25
Applicant: LUCENT TECHNOLOGIES INC
Inventor: CHIYOONNPIN CHIYAN , CHEUNG KING PING , PAI CHIEN-SHING , ZHU WEI
IPC: H01L21/762 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/02 , H01L29/78
Abstract: PROBLEM TO BE SOLVED: To reduce substantial capacitance connections present in a front-end structure up to first metal interconnect layer including a device substrate in a semiconductor device, such as a MOSFET, etc. SOLUTION: This device has a silicon substrate 12, an isolation structure 10 present in the substrate 12 (for example, a shallow trench isolation), an active element structure (for example, a transistor structure), a dielectric layer covering the active element structure, and a metal interconnect layer (a first metal layer) 28 covering the dielectric layer 26. At least, one of dielectric consisting layers in the front-end structure is provided with a material having a permittivity of less than 3.5. This material having relatively low permittivity reduces the capacitance connections in the front-end structure.
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公开(公告)号:JPH11330066A
公开(公告)日:1999-11-30
申请号:JP6574199
申请日:1999-03-12
Applicant: LUCENT TECHNOLOGIES INC
Inventor: PAI CHIEN-SHING , ZHU WEI
IPC: C23C14/06 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522
Abstract: PROBLEM TO BE SOLVED: To make a layer indicate various important properties for proper element performances such as low dielectric constant, high thermal stability, high insulation breakdown strength, low leakage current, etc., by depositing a fluorinated diamond-like C layer on a substrate. SOLUTION: The ion beam deposition, using one or a plurality of sources containing carbon and fluorine, is used for forming a fluorinated diamond-like carbon(CDLC) layer in an element, the FDLC layer reveals desirable dielectrical characteristics and thermal stability, or the FDLC layer is deposited, e.g., as an interlayer dielectric, using the ion beam deposition using carbon-containing ions and fluorine-containing ions, carbon-containing. ions and fluorine-containing ions 40, 41 directed to a base 44 can be produced from the same ion source 42 through implantation, e.g., corresponding mixture of carbon and fluorine- containing gas into the ion source 42.
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9.
公开(公告)号:JP2002141633A
公开(公告)日:2002-05-17
申请号:JP2000324945
申请日:2000-10-25
Applicant: LUCENT TECHNOLOGIES INC
Inventor: BROWN WALTER L , JIN SUNGHO , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide an equi-length nanowire and a circuit device vertically interconnected by the nanowire. SOLUTION: This vertically interconnected circuit device is provided. The circuit device has at least two circuit layers, and a plurality of equi-length nanowires arranged between the circuit layers. The nanowires comprise composites having a heterojunction present along the length thereof to provide for a variety of device applications. This method for making the circuit device includes a step for growing the plurality of nanowires on a removable substrate (a), a step for equalizing the length of the nanowires and for making the length of each of the plurality of nanowires nearly equal (b), a step for transferring and joining exposed ends of the plurality of nanowires to a first circuit layer (c), and a step for removing the substrate (d). The nanowire joined to the first circuit layer is further joined to a second one, thus forming the vertically interconnected circuit device.
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10.
公开(公告)号:JP2002110053A
公开(公告)日:2002-04-12
申请号:JP2001235663
申请日:2001-08-03
Applicant: LUCENT TECHNOLOGIES INC
Inventor: GOREN YEHUDA , JIN SUNGHO , KOCHANSKI GREGORY P , ZHU WEI
Abstract: PROBLEM TO BE SOLVED: To provide an improved gridded microwave tube equipped with a cold cathode, an anode, and a grid disposed between the anode and the cathode. SOLUTION: In one embodiment, the cold cathode has a refractory metal substrate and carbon nanotube emitters of 1 to 300 nm in diameter and 0.05 to 100 μm in length. The grid-cathode spacing is 1 to 100 μm. The grid has apertures of 0.5 to 100 μm in maximum size, and the thickness of the grid is 0.5 to 100 μm. Direct emission from the cathode to the grid material itself, which undesirably heats up the grid, is reduced either by; (a) providing a shadow mask between the grid and the emitters, or by; (b) selectively forming emitters in positions corresponding to the grid apertures. This microwave tube works at frequencies higher than 0.5 GHz, and it is advantageous to work at frequencies higher than 2 GHz.
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