公开(公告)号：JP2001077331A

公开(公告)日：2001-03-23

申请号：JP2000228310

申请日：2000-07-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHETLUR SUNDAR SRINIVASAN ,  CLEMENS JAMES THEODORE ,  MERCHANT SAILESH MANSINH ,  ROY PRADIP KUMAR ,  VAIDYA HEM M

IPC: H01L21/8242 ,  H01L21/02 ,  H01L21/768 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To increase the capacitance of a capacitor without decreasing its reliability by forming an upper electrode on a first electrode which is integrated with a trench formed in a first dielectric layer near a metal plug body and comes in contact with the metal plug and on a second dielectric layer formed near an upper portion. SOLUTION: A first metal plug 30 upwardly extends in the middle portion of a first trench 28, and an interconnection line 32 is formed on the first trench and makes contact with the first metal plug which determines an anchor recess 34 on the opposite side. The first trench 28 forms the anchor recess 34 when the interconnection line 32 is formed. This forms a directly equivalent recess in a conductive layer 52 of the interconnection line 32. The interconnection line 32 has a conductive capping layer 50, the conductive layer 52, and an electromigration barrier layer 54. A second trench 38 on a second dielectric layer 36 above the interconnection line 32 is formed near an anchor metal plug 22 to give an IC capacitor 20 larger surface area.