公开(公告)号：JP2000332221A

公开(公告)日：2000-11-30

申请号：JP2000137225

申请日：2000-05-10

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  CHEN-CHUN LEE ,  HELEN LOUIS MAINAADO ,  DANIEL JOSEPH VITTOKABAJJI

IPC: H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To easily conform to the standard/low temp. treating technology to improve the capacitance density and maintain a desired flatness by laying a dielectric material layer on lower electrodes and the surface of a dielectric layer and forming upper electrodes on the dielectric material layer. SOLUTION: Lower capacitor electrodes 102 are removed from the top surface of a dielectric 203 and also from a part of sidewalls. The etch back depth of the lower capacitor electrode 102 is on the order of 0.1 to 0.2 microns. A capacitor electrode layer 102 is removed, a dielectric material layer 405 for capacitors and upper electrodes 406 are deposited to complete forming of capacitors. Upper electrodes 406 of TiN or TaN on an oxide layer protect the oxide from Ti reducing the oxide layer and deteriorating dielectric characteristics. The tendency of short circuit esp. between the lower capacitor electrode 102 and the upper electrode 406 due to planarizing steps of chemical mechanical polishing is avoided by physically separating the two layers 102, 406.