公开(公告)号：JP2000208744A

公开(公告)日：2000-07-28

申请号：JP2000006224

申请日：2000-01-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor for integrated circuit using a tuntalum pentaoxide layer. SOLUTION: This method comprises the steps including a step 46 for forming a first metal electrode provided with a surface part made of metal nitride, a step 48 for forming a tantalum pentaoxide layer on the surface part while keeping a temperature lower than that of oxidizing the first metal electrode, a step 50 for annealing the tantalum pentaoxide layer through remote plasma, and a step 52 for forming a second electrode adjacent to the tantalum pentaoxide layer. These steps are preferably conducted while the tantalum pentaoxide is chemically vapor-deposited at about 500 deg.C or lower. Thus, the metal can be prevented from oxidization, and a high quality tantalum pentaoxide can be formed. The first metal electrode is made of at least one from among titanium, tungsten, tantalum, platinum, ruthenium, iridium, and their alloys.

公开(公告)号：JP2000012840A

公开(公告)日：2000-01-14

申请号：JP14899399

申请日：1999-05-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  FLEMING ROBERT MCLEMORE ,  SCHNEEMEYER LYNN FRANCES ,  VAN DOVER ROBERT BRUCE

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L29/49 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide a MOS transistor of a constitution, wherein the dielectric characteristic of a gate dielectric body are enhanced and miniaturization, high- speed operation and low-voltage operation of the transistor are made possible. SOLUTION: This transistor has a gate dielectric body having a composition, which consists of a Ta1-xAlxOy material made on the conditions of x=0.03 to 0.7 and y=1.5 to 3, a Ta1-xSixOy material where x=0.05 to 0.15 and y=1.5 to 3 and a Ta1-x-zAlxSizOy material made on the conditions of 70>x+z>5, z

公开(公告)号：JP2000002597A

公开(公告)日：2000-01-07

申请号：JP13559999

申请日：1999-05-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  FLEMING ROBERT M ,  LEVINE BARRY FRANKLIN ,  THOMAS GORDON A

IPC: G01K11/12 ,  H01L21/00

Abstract: PROBLEM TO BE SOLVED: To correctly control a temperature of a silicon work piece and correctly control a temperature-dependent process in a wide range of a process temperature by measuring the temperature on the basis of a spectral characteristic of a reflecting ultraviolet light. SOLUTION: A temperature-measuring apparatus 9 at an apparatus 39 for processing silicon work pieces is provided with a light source 11 such as a deuterium lamp or the like which irradiates ultraviolet light beams to a silicon surface 10a of a work piece 10 via a polarizer 13 such as a linear polarizer or the like, and a spectrum analysis apparatus 15 comprised of, e.g. a diffuse element 16 and a photodetector array 17. A beam 12 is irradiated to the silicon surface 10a by an angle of approximately 45-85 deg. and the reflecting light is spectrally analyzed after passing a polarizer 14 set at right angles to the polarizer 13. The obtained data is analyzed according to a predetermined system by a computer 44, whereby, for example, a temperature information for controlling a temperature-dependent process apparatus such as a vapor deposition apparatus 43, etc., with the use of a heating element 42 is provided.

公开(公告)号：JP2001196368A

公开(公告)日：2001-07-19

申请号：JP2000335536

申请日：2000-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/321 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/108 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide an electronic device composed of layers, which prevent the occurrence of a charge trap on the surface and have sufficient electrostatic capacity. SOLUTION: The electronic device having a capacitor structure 11 is formed by depositing a metal layer for specifying a first electrode 20 on the film of high dielectric constant materials and depositing a dielectric layer 22 of the capacitor structure 11 later on the first electrode 20. During this process, by exposing the first electrode 20 under the plasma of pure nitrogen, the partial oxidization of the first electrode 20 is prevented and the density of the charge trap on an electrode/dielectric interface is reduced. Besides, since a dielectric film 22 is passivated by nitrogen materials before forming an upper electrode 21, the mutual diffusion of the electrode and the dielectric is prevented.

公开(公告)号：JP2000356554A

公开(公告)日：2000-12-26

申请号：JP2000104530

申请日：2000-04-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  ROBERT J CHICHESUTAA ,  SUN DON X ,  THOMAS GORDON A

IPC: G01K1/14 ,  G01J5/00 ,  G01J5/02 ,  G01J5/10 ,  G01J5/58 ,  G01K7/02 ,  G01K11/00 ,  G01K15/00 ,  H01L21/00 ,  H01L21/316 ,  H01L21/324 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To correctly measure the temperature of a silicon work piece where a process material is present in a wide range including a low temperature by spectrum analyzing ultraviolet beams reflected by the silicon work piece and converting the obtained spectrum data into a temperature value. SOLUTION: A light source 11 of the light reflection type thermometer radiates ultraviolet rays and visible light beams in a wavelength range of 250-550 nm. The radiated light beams and ultraviolet beam 12 through a polariscope 13. A surface 10A of the silicon work piece 10 is irradiated thereon with the beam with an angle of incidence ϕ(ϕ>45 deg.). The reflecting light beam 12 at the surface 10A is corrected by a polariscope 14, and spectrum analyzed by a spectrum analysis apparatus 15 having an optical grating diffusion element 16 and a silicon photo detector 17, so that spectrum data is obtained. The obtained spectrum data is converted into a temperature value. Information on the temperature value is sent to an electronic circuit or heating element, thereby controlling a temperature. The temperature of the silicon work piece 10 when a process material is applied or the like can be correctly measured accordingly.

公开(公告)号：JP2000208743A

公开(公告)日：2000-07-28

申请号：JP2000006223

申请日：2000-01-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  SEINGUMUU CHOI ,  MERCHANT SAILESH M ,  ROY PRADIP K

IPC: H01G13/00 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a high dielectric constant and quality with less insulation leakage so that reduction of an insulating layer by the metal of an electrode is prevented, by allowing a capacitor to comprise a substantially flat upper side surface, so formed as to be substantially the same plane as adjoining upper side surface part of an insulating layer. SOLUTION: An electrolytic capacitor 24 comprises a substantially flat upper side surface, so formed as to be substantially the same plane with the upper side surface part of an adjoining third insulating (dielectric) layer 42. The end of a lower side metal electrode 44 and that of a capacitor insulating (dielectric) layer 46 are terminated at the upper side surface of a capacitor. The capacitor insulating layer 46 has a permittivity almost equal to 25 or above which attains a desired capacitor characteristics. An upper side electrode comprises a conductive metal layer 48 and a conductive metal layer 50. The conductive metal layer 48 functions as a barrier layer as well, preventing a metal from the metal conductive layer 50, for example, copper from diffusing in the insulating layer 46.

公开(公告)号：JP2000003885A

公开(公告)日：2000-01-07

申请号：JP10732999

申请日：1999-04-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/822 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To decrease the charge trapping density at the boundary surface of dielectric substance/silicon, by evaporating the thin film of high permittivity material on a silicon substrate, and forming the upper electrode after the structure is exposed to a plasma. SOLUTION: The substrate, which is exposed and has a silicon surface, is used. Then, a thin film 17, which has the thickness of the range of 2-10 nm and is the high permittivity material such as tantalum oxide or silicon nitride, is evaporated. The dielectric substance is directly evaporated on a silicon substrate 12 by performing chemical evaporation and the like. Then, the dielectric substance 17, which is evaporated for protecting the boundary surface of the dielectric substance/silicon and for decreasing leaking current, is exposed into plasma. In this case, the oxygen plasma having the air pressure of about 2 Torr and the substrate temperature of 100-400 deg.C protects the boundary surface, provides the stability and decreases the leaking current. Then, the surface of the dielectric substance 17 is nitrided as required, and an upper electrode 16 undergoes evaporation. This steps accompanies the evaporation of the upper electrode of polysilicon.

公开(公告)号：JP2000332221A

公开(公告)日：2000-11-30

申请号：JP2000137225

申请日：2000-05-10

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  CHEN-CHUN LEE ,  HELEN LOUIS MAINAADO ,  DANIEL JOSEPH VITTOKABAJJI

IPC: H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To easily conform to the standard/low temp. treating technology to improve the capacitance density and maintain a desired flatness by laying a dielectric material layer on lower electrodes and the surface of a dielectric layer and forming upper electrodes on the dielectric material layer. SOLUTION: Lower capacitor electrodes 102 are removed from the top surface of a dielectric 203 and also from a part of sidewalls. The etch back depth of the lower capacitor electrode 102 is on the order of 0.1 to 0.2 microns. A capacitor electrode layer 102 is removed, a dielectric material layer 405 for capacitors and upper electrodes 406 are deposited to complete forming of capacitors. Upper electrodes 406 of TiN or TaN on an oxide layer protect the oxide from Ti reducing the oxide layer and deteriorating dielectric characteristics. The tendency of short circuit esp. between the lower capacitor electrode 102 and the upper electrode 406 due to planarizing steps of chemical mechanical polishing is avoided by physically separating the two layers 102, 406.

公开(公告)号：JP2000208741A

公开(公告)日：2000-07-28

申请号：JP2000002770

申请日：2000-01-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To easily cope with a standard process or low-temperature process and flattening technology for improved mounting density of capacitance by depositing a dielectrics layer in a cavity, with a conductive layer deposited over it functioning as an upper part plate. SOLUTION: A conductive plug 301 is formed of tungsten or other metal material, comprising a cavity 308 in it. The conductive plug 301 is conductive to a first metal layer 304 which is connected to a conductive bias 305. The conductive bias 305 eventually contacts to a source or drain of an FET. A capacitor comprises a side wall surface 309 of a cavity, a lower part surface 310 of it, and an upper part surface 300 of a plug. A high permittivity material layer 302 of the capacitor comprises an upper part plate 303.

公开(公告)号：GB2349507A

公开(公告)日：2000-11-01

申请号：GB0020578

申请日：2000-01-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  MERCHANT SAILESH M ,  ROY PRADIP KUMAR

IPC: H01L21/02 ,  H01L21/316 ,  H01L29/49 ,  H01L29/92

Abstract: The present invention provides a semiconductor device that has a metal barrier layer (145, 235) for a dielectric material, which can be used in an integrated circuit, if so desired. The semiconductor device provides a capacitance to the integrated circuit and in a preferred embodiment comprises a first layer (135, 220) located on a surface of the integrated circuit. A metal barrier layer (145, 235) is located on the first layer (135, 220) and is susceptible to oxidation by oxygen. A high K capacitor dielectric layer (150, 240) (i.e., a higher K than silicon dioxide) that contains oxygen, such as tantalum pentoxide, is located over the metal barrier layer (145, 235). The semiconductor device further includes a second layer (110, 225) located over the high K capacitor dielectric layer (150, 240).