公开(公告)号：JP2001223339A

公开(公告)日：2001-08-17

申请号：JP2001011599

申请日：2001-01-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DOWNEY STEPHEN WARD ,  EDWARD BELDEN HARRIS ,  MERCHANT SAILESH MANSINH

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a capacitor structure for avoiding disadvantages of a structure and a manufacturing process of a conventional technique and to provide a manufacturing method thereof. SOLUTION: The capacitor of the present invention that is used in a semiconductor device comprises a first capacitor electrode 164 including a part of a damascene interconnect structure, an insulating layer 166 which is formed on the damascene interconnect structure and acts as a passivation layer, and a second capacitor electrode 168 including a conductive layer formed at least on a part of the insulating layer. The semiconductor device includes the damascene interconnect structure formed on a substrate of a semiconductor wafer.

公开(公告)号：JP2000208732A

公开(公告)日：2000-07-28

申请号：JP2000006226

申请日：2000-01-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： EDWARD BELDEN HARRIS ,  MERCHANT SAILESH M ,  IIFEN WINSTON YAN

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit capacitor provided with metallic electrodes and is improved in reliability by arranging a capacitor dielectric layer on a lower metallic electrode and an upper metallic electrode on the dielectric layer. SOLUTION: An integrated circuit capacitor 20 is formed on a substrate 24 and a dielectric layer 28 is formed on an interconnecting line 26 laid adjacently to the substrate 24. A metallic plug 32 is arranged in the dielectric layer 28. The capacitor 20 contains lower and upper multilayered metallic electrodes 36 and 40 and a capacitor dielectric layer 38 formed between the electrodes 36 and 40. The lower electrode 36 is in contact with the plug 32. A second dielectric layer, namely, the capacitor dielectric layer 38 lies on the lower electrode 36 and the upper electrode 40 lies on the second dielectric layer. The dielectric layer 38 lies on the lower electrode 36 and is composed of, for example, silicon dioxide, silicon nitride, and/or a material having an appropriate large dielectric constant, or the alloy of the material.