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    PRODUCT HAVING CAPACITOR
    3.
    发明专利
    PRODUCT HAVING CAPACITOR 失效

    公开(公告)号：JPH10340999A

    公开(公告)日：1998-12-22

    申请号：JP14098998

    申请日：1998-05-22

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： FLEMING ROBERT MCLEMORE ,  SCHNEEMEYER LYNN FRANCES ,  VAN DOVER ROBERT BRUCE

    IPC: H01G4/33 ,  H01G4/08 ,  H01G4/10 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04

    Abstract: PROBLEM TO BE SOLVED: To fairly improve dielectric characteristic, make breakdown voltage high and statistically uniform, and reduce a leakage current, by containing tantalum, aluminum, oxygen and nitrogen in dielectric layer, in a capacitor having two conductive members and the dielectric layer between the conductive members. SOLUTION: By adding both aluminum and nitrogen to a Ta oxide film, dielectric characteristics of a film can be considerably improved. In sputtering gas, about 5-40 at.% of tantalum is substituted by aluminum, and about 10-25 vol.% of oxygen is substituted by nitrogen. Thereby dielectric characteristic can be considerably improved, a breakdown voltage can be made high and satistically uniform, and a linkage current can be reduced. A TaOx based dielectric film having a comparatively low leakage current and a comparatively high breakdown voltage can be manufactured. For example, a capacitor 80 on a substrate 81 contains a dielectric film 83 like this between two conductive electrodes 82 and 84.

    4.
    发明专利
    未知

    公开(公告)号：DE69800287D1

    公开(公告)日：2000-10-12

    申请号：DE69800287

    申请日：1998-05-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： FLEMING ROBERT MCLEMORE ,  VAN DOVER ROBERT BRUCE ,  SCHNEEMEYER LYNN FRANCES

    IPC: H01G4/33 ,  H01G4/08 ,  H01G4/10 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L21/3205

    Abstract: We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.

    8.
    发明专利
    未知

    公开(公告)号：DE69800287T2

    公开(公告)日：2001-01-25

    申请号：DE69800287

    申请日：1998-05-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： FLEMING ROBERT MCLEMORE ,  VAN DOVER ROBERT BRUCE ,  SCHNEEMEYER LYNN FRANCES

    IPC: H01G4/33 ,  H01G4/08 ,  H01G4/10 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L21/3205

    Abstract: We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.

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