公开(公告)号：JP2000199049A

公开(公告)日：2000-07-18

申请号：JP22897699

申请日：1999-08-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DU HONGHUA ,  GRAEBNER JOHN EDWIN ,  JIN SUNGHO ,  JOHNSON DAVID WILFRED JR ,  ZHU WEI

IPC: H01L41/187 ,  C23C14/08 ,  C23C16/40 ,  H01L41/24

Abstract: PROBLEM TO BE SOLVED: To provide a device which is capable of easily forming an oriented Perovskite layer to show the specified piezoelectric coefficient by depositing a template layer on a substrate of diamond, etc., by a vapor phase deposition method, and depositing a lead zirconate titanate layer thereon by the vapor phase deposition method. SOLUTION: A template layer is deposited on a substrate formed of diamond, silicon, platinum-covered material, etc., by a physical or chemical vapor phase deposition method. The template layer is preferably formed of lead titanate, strontium titanate, barium titanate, etc., of about 0.06-0.12 μm in thickness. A lead zirconate titanate(PZT) layer is deposited thereon by the physical or chemical deposition method. The PZT layer has the dielectric constant of about 500-650 at 1 V and 100 kHz, and is preferably formed to be about 0.1-10 μm in thickness. The PZT layer easily forms an oriented Perovskite layer of about 50×10-12 to 350×10-12 m/V in piezoelectric coefficient through the template layer of Perovskite structure.

公开(公告)号：CA2271282A1

公开(公告)日：2000-02-14

申请号：CA2271282

申请日：1999-05-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GRAEBNER JOHN EDWIN ,  DU HONGHUA ,  ZHU WEI ,  JIN SUNGHO ,  JOHNSON DAVID WILFRED JR

IPC: H01L41/187 ,  C23C14/08 ,  C23C16/40 ,  H01L41/24 ,  H01L41/00 ,  C30B25/04 ,  C30B29/32

Abstract: The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.