公开(公告)号：JPH09129630A

公开(公告)日：1997-05-16

申请号：JP24761496

申请日：1996-09-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GROSS MICHAEL DOUGLAS ,  PEARCE CHARLES WALTER

IPC: H01L21/316 ,  H01L21/31 ,  H01L21/318 ,  H01L21/32 ,  H01L21/76

Abstract: PROBLEM TO BE SOLVED: To efficiently form a field oxide and twin tabs at high speeds in the manufacturing process of an integrated circuit. SOLUTION: A silicon dioxide blanket layer 13 is formed from a chemical precursor on the surface of a substrate 11 and a material layer 15 (silicon nitride) is formed on the layer 13. Then the surfaces 17 and 19 of the substrate are exposed by patterning the layer 15 and twin tabs are formed by thermally oxidizing the surfaces 17 and 19 and removing at least the layer 15. It is also possible to form a field oxide during the course of the thermal oxidation.