公开(公告)号：JP2001189285A

公开(公告)日：2001-07-10

申请号：JP2000355111

申请日：2000-11-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BILLIG MICHAEL STEVEN ,  PEARCE CHARLES WALTER

IPC: H01L21/28 ,  H01L21/26 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/336 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an integrated circuit for changing the rate of heat flow locally, by applying thin film made of each material for the sake of achieving different processing temperatures, particularly, when a wafer is heated at high temperatures, and changing material characteristics, such as emissivity, absorptivity, reflectivity, and so on. SOLUTION: A heating method includes a step for providing a wafer 30 having a surface 31, a step for changing a rate of heat flow at a part 32, by applying at least one layer of films 33 to at least one selective part 32 of the surface 31 and changing material characteristics, such as emissivity, absorptance, reflectivity and so on, a step for starting reaction at the part 32 by heating the wafer 30 at high temperatures, and a step for observing the temperatures of the wafer 30 and ending the heating under control of the heating, when a prescribed time has elapsed.

公开(公告)号：JP2001023942A

公开(公告)日：2001-01-26

申请号：JP2000119195

申请日：2000-04-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRIAN CHAEYOO CHUN ,  GLENN ALAN MARSHALL ,  PEARCE CHARLES WALTER ,  YANDERS KEVIN P

IPC: B08B3/04 ,  B08B3/00 ,  H01L21/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To improve the reliability of an integrated circuit device during cleaning process to decrease the number of defective products, by covering transparent window of wafer cleaning machine by using a light blocking material during cleaning/drying semiconductor wafers. SOLUTION: A cleaning chamber 200 has a door 250 and can position carriers on which semiconductor wafers are loaded in the cleaning chamber 200. The door 250 has a transparent window 270 and an operator can monitor the cleaning state of semiconductor wafers through the transparent window 270. Light blocking material layers 400 are formed on the transparent window 270 of the cleaning chamber 200 and on the transparent window 370 of the cleaning/ drying chamber 300. The light-shielding material layers 400 prevent light from entering the chambers through the transparent windows 270 and 370 of a wafer cleaning machine 100 during cleaning the semiconductor wafers. The light blocking material layers are made of a light absorbing material or a light reflecting material, and are provided to prevent ambient light from entering the cleaning chamber 200 and cleaning/drying chamber 300.

公开(公告)号：JP2000353699A

公开(公告)日：2000-12-19

申请号：JP2000142467

申请日：2000-05-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HAAS JEFFREY KENNETH ,  MCKEE DANIEL JOSEPH ,  PEARCE CHARLES WALTER

IPC: H01L21/316 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088

Abstract: PROBLEM TO BE SOLVED: To form a sufficient oxide layer, with a comparatively simplified process by injecting fluorine into a silicon lattice and thereafter forming a silicon oxide region through adoption of oxidizing process in the dry oxidizing process or wet oxidizing process. SOLUTION: A substrate 100 has a patterning layer 110, and the patterning layer 110 preferably forms, within the substrate 100, a region where a field oxide region 120 is formed with a photoresist mask. When fluorine indicated with the arrow mark 115 is injected to a substrate 100, fluorine atoms form a fluorine injection region 112 within the surface of the substrate 100. The preferable fluorine atom amount injected to the substrate 100 is about 1×1011 to 5×1016 atoms/cm2 and preferred energy injection amount is 1 keV to 1 MeV. After the patterning layer 110 is removed, the fluorine injecting region 112 of the substrate 100 is processed with the oxidizing processing to cause both the field oxide region 120 and a gate oxide layer 125 to grow.

公开(公告)号：JP2000357689A

公开(公告)日：2000-12-26

申请号：JP2000142468

申请日：2000-05-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HAAS JEFFREY KENNETH ,  MCKEE DANIEL JOSEPH ,  PEARCE CHARLES WALTER

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To simplify a process by a method wherein fluorine is injected to a layer of materials to form an oxide region. SOLUTION: A substrate 100 has a patterning layer 110, and preferably a region where a field oxide region 120 is formed is formed in the substrate 100 by means of a photoresist mask. Fluorine is injected into a surface of the substrate 100, and preferably fluorine atoms are injected into the surface of the substrate 100 by ions injection, to form a fluorine injection region 112. The patterning layer 110 is eliminated, and the fluorine injection region 112 of the substrate 100 is thereafter oxidized, thereby growing the field oxide region and a gate oxide layer. A thickness of the field oxide region is in the range of 1000 Å and 10,000 Å. A thickness of the gate oxide layer is in the range of 20 Å and 1000 Å, and preferably in the range of 50 Å and 500 Å. An amount of fluorine of the field oxide region and the gate oxide layer is preferably in the range of 5*1010 atoms/cm2 and 7*1013 atoms/cm2.

公开(公告)号：JPH09129593A

公开(公告)日：1997-05-16

申请号：JP24281696

申请日：1996-09-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： PEARCE CHARLES WALTER

IPC: B41J2/175 ,  B41J2/16 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To accurately form a channel plate by exposing parts of a substrate on which a silicon nitride film is formed by patterning the nitride film and forming V-shaped grooves by etching the exposed parts. SOLUTION: After a silicon nitride layer 141 is formed on a substrate 11 through a thermally nitriding process and parts of the substrate 11 are exposed by patterning the nitride layer 141 while the temperature of the layer 141 is maintained at 900-1,200 deg.C under the atmospheric pressure in a nitrogen atmosphere or a mixed atmosphere of nitrogen and ammonia. Then V-shaped grooves 15 and 13 are formed simultaneously with a tapered channel 17 by etching the exposed parts with a KOH etchant. Therefore, a channel plate can be formed accurately.

公开(公告)号：JPH09129630A

公开(公告)日：1997-05-16

申请号：JP24761496

申请日：1996-09-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GROSS MICHAEL DOUGLAS ,  PEARCE CHARLES WALTER

IPC: H01L21/316 ,  H01L21/31 ,  H01L21/318 ,  H01L21/32 ,  H01L21/76

Abstract: PROBLEM TO BE SOLVED: To efficiently form a field oxide and twin tabs at high speeds in the manufacturing process of an integrated circuit. SOLUTION: A silicon dioxide blanket layer 13 is formed from a chemical precursor on the surface of a substrate 11 and a material layer 15 (silicon nitride) is formed on the layer 13. Then the surfaces 17 and 19 of the substrate are exposed by patterning the layer 15 and twin tabs are formed by thermally oxidizing the surfaces 17 and 19 and removing at least the layer 15. It is also possible to form a field oxide during the course of the thermal oxidation.