公开(公告)号：JP2001196584A

公开(公告)日：2001-07-19

申请号：JP2000355235

申请日：2000-11-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： JIAN TAN ,  LOTFI ASHRAF W

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/24 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a lateral MOSFET and a manufacturing method of the MOSFET and a power converter and a manufacturing method of the power converter. SOLUTION: The lateral MOSFET has a silicon carbide layer arranged on or in a substrate, consisting of a semiconductor wafer, a gate formed on the silicon carbide layer and source and drain regions, which are arranged in the silicon carbide layer and are separated from the gate in the lateral direction.