公开(公告)号：JP2001189452A

公开(公告)日：2001-07-10

申请号：JP2000307041

申请日：2000-10-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TAN JIAN ,  LOTFI ASHRAF W

IPC: H01L21/336 ,  H01L29/20 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a MOSFET and its manufacturing method used for an application for changing over power, in which drift resistance and channel resistance are improved. SOLUTION: This MOSFET has an epitaxial layer under a gate oxide layer 460, and has a substrate 410, in which a part of the epitaxial layer is used as a part of a gate region in a metal-oxide semiconductor field effect transistor(MOSFET), an N-type drift region 430 located so as to be brought into contact with a gate region from the side-face direction, and a source region 440 and a drain region 450 located in the epitaxial layer and laterally straddling the gate region 420 and the N-type drift region 430, respectively.

公开(公告)号：JP2001196584A

公开(公告)日：2001-07-19

申请号：JP2000355235

申请日：2000-11-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： JIAN TAN ,  LOTFI ASHRAF W

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/24 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a lateral MOSFET and a manufacturing method of the MOSFET and a power converter and a manufacturing method of the power converter. SOLUTION: The lateral MOSFET has a silicon carbide layer arranged on or in a substrate, consisting of a semiconductor wafer, a gate formed on the silicon carbide layer and source and drain regions, which are arranged in the silicon carbide layer and are separated from the gate in the lateral direction.

公开(公告)号：JP2001135770A

公开(公告)日：2001-05-18

申请号：JP2000306945

申请日：2000-10-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： LOTFI ASHRAF W ,  WELD JOHN D

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/50 ,  H01L25/04

Abstract: PROBLEM TO BE SOLVED: To provide a lead frame, used when a circuit having individual component members is housed in a batch, and a method of manufacturing the same. SOLUTION: As an example, a lead frame includes a lead wire support structure and a plurality of separatable lead wires connected to the lead wire support structure. The plurality of separatable lead wires extend from the lead wire support structure to the prescribed positions corresponding to terminals of individual component members.

公开(公告)号：JP2001053239A

公开(公告)日：2001-02-23

申请号：JP2000187151

申请日：2000-06-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KOSSIVES DEAN P ,  LOTFI ASHRAF W ,  SCHNEEMEYER LYNN F ,  STEIGERWALD MICHAEL ,  VAN DOVER R BRUCE

IPC: H01F3/02 ,  H01F17/00 ,  H01F27/00 ,  H01F41/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06 ,  H03H7/01 ,  H03H7/075

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit, which not only comprises a micromagnetic device but comprises other microcomputers, such as a capacitor and a transistor. SOLUTION: An integrated circuit 400 includes a substrate 410 with an insulator and a capacitor, which are formed thereon. Moreover, the circuit 400 comprises bonding agents 480 and 485 formed on the insulator and includes a micromagnetic device. The device includes a ferromagnetic core 490 formed on the bonding agent 485. The bonding agents form a bond between the insulator and the core 490 for fixing the core 400 on the substrate 410. The device comprises at least the one wiring of wirings 440 and 460, arranged in close proximity to the core 490 for giving desired magnetic characteristics to the core 490. The device is coupled electrically with the capacitor.

公开(公告)号：CA2321537A1

公开(公告)日：2001-04-06

申请号：CA2321537

申请日：2000-10-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WELD JOHN DAVID ,  LOTFI ASHRAF W

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/50 ,  H01L25/04

Abstract: The present invention provides a lead frame for use in packaging a circu it having a discrete component, and a method of manufacture thereof. In one embodiment, the lead frame includes a lead support structure and a plurality of severable leads that are coupled to the lead support structure. The pluralit y of severable leads extend inward from the lead support structure to predetermined locatio ns corresponding to terminals of the discrete component.

公开(公告)号：DE60020011D1

公开(公告)日：2005-06-16

申请号：DE60020011

申请日：2000-06-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KOSSIVES DEAN P ,  LOTFI ASHRAF W ,  SCHNEEMEYER LYNN F ,  STEIGERWALD MICHAEL L ,  VAN DOVER R BRUCE

IPC: H01F3/02 ,  H01F17/00 ,  H01F27/00 ,  H01F41/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06 ,  H03H7/01 ,  H03H7/075 ,  H01L23/64

Abstract: An integrated circuit and method of manufacturing therefor. In one embodiment, the integrated circuit includes a substrate with an insulator and a capacitor formed over the substrate. The integrated circuit further includes an adhesive formed over the insulator. The integrated circuit still further includes a micromagnetic device. The micromagnetic device includes a ferromagnetic core formed over the adhesive. The adhesive forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate. The micromagnetic device also includes at least one winding, located proximate the ferromagnetic core, to impart a desired magnetic property to the ferromagnetic core. The micromagnetic device is electrically coupled to the capacitor.

公开(公告)号：DE60041233D1

公开(公告)日：2009-02-12

申请号：DE60041233

申请日：2000-10-03

Applicant: LUCENT TECHNOLOGIES INC

Inventor： LOTFI ASHRAF W ,  TAN JIAN

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/20

Abstract: A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.

公开(公告)号：DE60020011T2

公开(公告)日：2006-03-16

申请号：DE60020011

申请日：2000-06-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KOSSIVES DEAN P ,  LOTFI ASHRAF W ,  SCHNEEMEYER LYNN F ,  STEIGERWALD MICHAEL L ,  VAN DOVER R BRUCE

IPC: H01F3/02 ,  H01F17/00 ,  H01F27/00 ,  H01F41/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/64 ,  H01L27/04 ,  H01L27/06 ,  H03H7/01 ,  H03H7/075

Abstract: An integrated circuit and method of manufacturing therefor. In one embodiment, the integrated circuit includes a substrate with an insulator and a capacitor formed over the substrate. The integrated circuit further includes an adhesive formed over the insulator. The integrated circuit still further includes a micromagnetic device. The micromagnetic device includes a ferromagnetic core formed over the adhesive. The adhesive forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate. The micromagnetic device also includes at least one winding, located proximate the ferromagnetic core, to impart a desired magnetic property to the ferromagnetic core. The micromagnetic device is electrically coupled to the capacitor.