公开(公告)号：JPH1174460A

公开(公告)日：1999-03-16

申请号：JP12711398

申请日：1998-05-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： FREI MICHEL RANJIT ,  KING CLIFFORD ALAN ,  NG KWOK K ,  WESTON HARRY THOMAS ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/762 ,  H01L21/764 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To manufacture an integrated circuit device for isolating devices from each other, by a method wherein both of a noise-sensitive element and a noise-generating element are formed on the same single crystal silicon substrate. SOLUTION: A noise-sensitive element is isolated from a noise-generating element by a porous silicon region 12 formed on a substrate 10. The volume of the region 12 depends upon the degree of a necessary isolation of the noise- sensitive element from the noise-generating element. The noise-sensitive element is an analog element and the noise-generating element is a digital element. The substrate 10 is normally a silicon substrate. A diagram when viewed from above of the substrate 10 having an insulating region 12 in the interior thereof for isolating circuit blocks 14 from each other is shown in the diagram. When a mask is formed, the isolation region 12 is formed on the substrate 10 by converting an exposed silicon region into the porous silicon region. The porous silicon region is normally formed by performing an anode etching on the exposed silicon region in a concentrated hydrofluoric acid solution. An insulating substrate 12 is formed so as to pass through the substrate 10, and an analog device is isolated from a digital device.

公开(公告)号：JPH11330281A

公开(公告)日：1999-11-30

申请号：JP6574099

申请日：1999-03-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KING CLIFFORD ALAN ,  NG KWOK K

IPC: H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To provide a process for manufacturing a bipolar and BICMOS device. SOLUTION: This manufacturing process includes the following steps, a step to form a first layer made of a first material on a silicon board 1 of which thickness is about 10 nm or less, a step to form a second layer made of second material on the first layer, a step for forming a window in the second layer made of a material terminating in the first layer, a step for removing a part of the first layer in the base of the window and to allow at least a part of the first layer under the second layer to form such a clearance 375 between the second layer and board that is defined by a distance therebetween, a step for placing a clearance, in such a condition that the height of clearance is at least 10% larger than the terminal end of clearance in the proximity end of clearance; a step to refill the clearance with a material by chemical vapor phase accumulation.

公开(公告)号：DE69900028T2

公开(公告)日：2001-03-22

申请号：DE69900028

申请日：1999-03-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KING CLIFFORD ALAN ,  NG KWOK K

IPC: H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

Abstract: A process for device fabrication in which amorphous silicon is deposited into a narrow gap is disclosed. The gap is an opening between two layers of material. The gap results when a window is formed in one of the two layers and a portion of a third layer at the base of the window is removed. In the formation of a bipolar device, a layer of oxide is formed on a silicon substrate and a layer of silicon is formed on the oxide layer which serves as the extrinsic base for the device. In the bipolar device, a window is formed in the polysilicon and the oxide layer at the base of the window is then removed. In the bipolar device, the silicon substrate underlies the gap and the extrinsic base silicon overlies the gap. When the oxide is removed from the base of the window, a portion of the oxide layer underlying the extrinsic base silicon is removed as well, thereby forming a gap between the extrinsic base silicon and the underlying silicon substrate. In the process of the present invention, the resulting gap has a proximate end which is the opening of the gap into a window and a distal end which is the interface between the gap and the remaining oxide. The width of the gap is less than about 20 nm. The gap is then subjected to conditions that cause the gap to have a first height at its proximate end which is greater than its height at its distal end. The tapered gap is then filled with polysilicon. Because of its tapered configuration, the polysilicon uniformly fills the gap, without significant voids therein.

公开(公告)号：DE69900028D1

公开(公告)日：2000-12-21

申请号：DE69900028

申请日：1999-03-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KING CLIFFORD ALAN ,  NG KWOK K

IPC: H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

Abstract: A process for device fabrication in which amorphous silicon is deposited into a narrow gap is disclosed. The gap is an opening between two layers of material. The gap results when a window is formed in one of the two layers and a portion of a third layer at the base of the window is removed. In the formation of a bipolar device, a layer of oxide is formed on a silicon substrate and a layer of silicon is formed on the oxide layer which serves as the extrinsic base for the device. In the bipolar device, a window is formed in the polysilicon and the oxide layer at the base of the window is then removed. In the bipolar device, the silicon substrate underlies the gap and the extrinsic base silicon overlies the gap. When the oxide is removed from the base of the window, a portion of the oxide layer underlying the extrinsic base silicon is removed as well, thereby forming a gap between the extrinsic base silicon and the underlying silicon substrate. In the process of the present invention, the resulting gap has a proximate end which is the opening of the gap into a window and a distal end which is the interface between the gap and the remaining oxide. The width of the gap is less than about 20 nm. The gap is then subjected to conditions that cause the gap to have a first height at its proximate end which is greater than its height at its distal end. The tapered gap is then filled with polysilicon. Because of its tapered configuration, the polysilicon uniformly fills the gap, without significant voids therein.