公开(公告)号：JP2001166168A

公开(公告)日：2001-06-22

申请号：JP2000344642

申请日：2000-11-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： XIE YA-HONG ,  SHMULOVICH JOSEPH ,  GLEBOV ALEXEI ,  BRUCE ALLAN J

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical device of a silica base on a silicon substrate. SOLUTION: This optical device has a clad layer formed within the silicon substrate. The optical device has an active region which is formed on the clad layer. The clad layer is formed by forming a region of porous silicon on the silicon substrate. The porous silicon is thereafter oxidized and is made higher in density. The active region of the optical device after the treatment to make the density higher is formed on the clad layer.

公开(公告)号：JPH10154797A

公开(公告)日：1998-06-09

申请号：JP28327797

申请日：1997-10-16

Applicant: LUCENT TECHNOLOGIES INC

Inventor： XIE YA-HONG

IPC: H01L21/822 ,  H01L21/3063 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a solid semiconductor device having such an inductor that can be insulated completely from a substrate. SOLUTION: In a semiconductor device having an inductor, the inductor 25 is formed on a non-oxidized porous silicon area 15 formed in a silicon substrate 10. The porous silicon area 15 reduces the capacitive coupling and inductive coupling between the inductor 25 and the substrate 10. It is preferable to form the silicon area 15 by using such an electrolysis process that connects the silicon substrate 10 to be exposed to an electrolytic solution to an anode.

公开(公告)号：JP2000150783A

公开(公告)日：2000-05-30

申请号：JP31118199

申请日：1999-11-01

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BELK NATHAN ,  COCHRAN WILLIAM THOMAS ,  TSU-RONG CHU JEROME ,  FREI MICHEL RANJIT ,  GOLDTHORP DAVID ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR ,  MOINIAN SHAHRIAR ,  NG KWOK K ,  PINTO MARK RICHARD ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve the Q factor of an inductor in an integrated circuit by forming a buried layer in a substrate, forming a conductive layer on the buried layer, and composing the inductor with the conductive layer and the buried layer. SOLUTION: A low dopant bulk substrate 100 is annealed, and a dopant is moved from a solid dispersion source 102 into the low-dopant bulk substrate 100, thus forming a buried layer 105. After that, a cap layer 104 and the solid dispersion source 102 are eliminated by an etching agent, a low-doped layer 110 is formed, an interlevel dielectric layer 115 is formed on it, and a plurality of conductive layers 120a, 120b, and 120c are provided at the interlevel dielectric layer 115. Further, a conductive layer 130 is formed on it, and an inductor is composed of the conductive layer 130 and the buried layer 105, thus improving the Q factor of the inductor in the integrated circuit.

公开(公告)号：JP2001042273A

公开(公告)日：2001-02-16

申请号：JP2000214298

申请日：2000-07-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN J ,  GLEBOV ALEXEI ,  SHMULOVICH JOSEPH ,  XIE YA-HONG

IPC: G02B6/12 ,  G02F1/01 ,  G02F1/313

Abstract: PROBLEM TO BE SOLVED: To provide a method of controlling the heat flow from a heated waveguide transferred through a substrate. SOLUTION: The optical device which is a waveguide is formed on a silicon substrate 20 and is equipped with a heating element 25 on the waveguide. The waveguide is formed on the region of a porous silicon 15 formed on the silicon substrate. The porous silicon region has higher resistance against the heat flow than that of the silicon substrate on which the device is to be formed. Optionally, the porous silicon region has higher resistance against the heat flow than that of the waveguide.

公开(公告)号：JPH1174460A

公开(公告)日：1999-03-16

申请号：JP12711398

申请日：1998-05-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： FREI MICHEL RANJIT ,  KING CLIFFORD ALAN ,  NG KWOK K ,  WESTON HARRY THOMAS ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/762 ,  H01L21/764 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To manufacture an integrated circuit device for isolating devices from each other, by a method wherein both of a noise-sensitive element and a noise-generating element are formed on the same single crystal silicon substrate. SOLUTION: A noise-sensitive element is isolated from a noise-generating element by a porous silicon region 12 formed on a substrate 10. The volume of the region 12 depends upon the degree of a necessary isolation of the noise- sensitive element from the noise-generating element. The noise-sensitive element is an analog element and the noise-generating element is a digital element. The substrate 10 is normally a silicon substrate. A diagram when viewed from above of the substrate 10 having an insulating region 12 in the interior thereof for isolating circuit blocks 14 from each other is shown in the diagram. When a mask is formed, the isolation region 12 is formed on the substrate 10 by converting an exposed silicon region into the porous silicon region. The porous silicon region is normally formed by performing an anode etching on the exposed silicon region in a concentrated hydrofluoric acid solution. An insulating substrate 12 is formed so as to pass through the substrate 10, and an analog device is isolated from a digital device.

公开(公告)号：DE69936175T2

公开(公告)日：2008-01-24

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：CA2323683C

公开(公告)日：2006-06-06

申请号：CA2323683

申请日：2000-10-18

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN JAMES ,  SHMULOVICH JOSEPH ,  XIE YA-HONG ,  GLEBOV ALEXEI

IPC: G02B6/13 ,  G02B6/12 ,  G02B6/122

Abstract: A process for fabricating a silica-based optical device on a silicon substra te is disclosed. The device has a cladding formed in a silicon substrate. The devi ce also has an active region, and that active region is formed on the cladding. The cladding is fabricated by forming a region of porous silicon in the silicon substrate . The porous silicon is then oxidized and densified. After densification, the acti ve region of the device is formed on the cladding.

公开(公告)号：DE69936175D1

公开(公告)日：2007-07-12

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：CA2323683A1

公开(公告)日：2001-05-30

申请号：CA2323683

申请日：2000-10-18

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN JAMES ,  GLEBOV ALEXEI ,  SHMULOVICH JOSEPH ,  XIE YA-HONG

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

Abstract: A process for fabricating a silica-based optical device on a silicon substrate is disclosed. The device has a cladding formed in a silicon substrate. The device also has an active region, and that active region is formed on the cladding. The cladding is fabricated by forming a region of porous silicon in the silicon substrate. The porous silicon is then oxidized and densified. After densification, the active region of the device is formed on the cladding.