公开(公告)号：JP2002314093A

公开(公告)日：2002-10-25

申请号：JP2002043700

申请日：2002-02-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KIRK WILLIAM ,  BAO ZHENAN ,  MACH PETER ,  ROGERS JOHN A

IPC: H01L21/316 ,  H01L21/318 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40 ,  H01L51/52

Abstract: PROBLEM TO BE SOLVED: To provide an encapsulation material which can be deposited at a lower temperature and provides required encapsulation characteristics. SOLUTION: A method for encapsulating semiconductor devices includes a step in which an encapsulation material is deposited on a semiconductor device in such an environment as to enhance the performance of the semiconductor device. The encapsulation material is selected from a group of materials including an inorganic dielectric material, organic-inorganic composite material, inorganic polymer, silicon polymer, encapsulation material of laminated metal polymer, and multiplayer structures of any of these materials. The encapsulation material is deposited using a gas flow composed of silane and nitrogen and an ammonia gas flow. More specifically, the encapsulation material is SiOx and SiNx (X is between 0.1 and 10 inclusive).