公开(公告)号：JP2002314093A

公开(公告)日：2002-10-25

申请号：JP2002043700

申请日：2002-02-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KIRK WILLIAM ,  BAO ZHENAN ,  MACH PETER ,  ROGERS JOHN A

IPC: H01L21/316 ,  H01L21/318 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40 ,  H01L51/52

Abstract: PROBLEM TO BE SOLVED: To provide an encapsulation material which can be deposited at a lower temperature and provides required encapsulation characteristics. SOLUTION: A method for encapsulating semiconductor devices includes a step in which an encapsulation material is deposited on a semiconductor device in such an environment as to enhance the performance of the semiconductor device. The encapsulation material is selected from a group of materials including an inorganic dielectric material, organic-inorganic composite material, inorganic polymer, silicon polymer, encapsulation material of laminated metal polymer, and multiplayer structures of any of these materials. The encapsulation material is deposited using a gas flow composed of silane and nitrogen and an ammonia gas flow. More specifically, the encapsulation material is SiOx and SiNx (X is between 0.1 and 10 inclusive).

公开(公告)号：JP2002324931A

公开(公告)日：2002-11-08

申请号：JP2002053546

申请日：2002-02-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN

IPC: H01L51/05 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide fluorene organic semiconductor material which shows superior transistor property and which does not require a special manufacturing method or special transistor structure. SOLUTION: The problem is solved by a thin film transistor device being fluorene oligomer in which a semiconductor layer has the molecule amount of under 2000 and which is constituted of one to ten fluorene ring units. Oligomer is deposited by simple vapor deposition and a desired semiconductor characteristic such as high mobility can be obtained, for example.

公开(公告)号：JPH11330004A

公开(公告)日：1999-11-30

申请号：JP8388899

申请日：1999-03-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  ROGERS JOHN A

IPC: H01L21/336 ,  B29C33/00 ,  B29C33/40 ,  B29C33/42 ,  B29C39/24 ,  B29C39/26 ,  H01L21/283 ,  H01L21/288 ,  H01L29/786 ,  H05K3/10 ,  H05K3/12

Abstract: PROBLEM TO BE SOLVED: To attain improvements in cost performance and production efficiency by decreasing labor and time in the case of forming a fine body structure. SOLUTION: A first surface 12 of elastomer mold 10 having first and second surfaces 12 and 14 has at least one recessed fine groove part 16, and the second surface 14 has an access opening part 20, extended through the mold 10 to the first surface 12 and communicated to the fine groove part 16. The mold 10 is placed on a prepared substrate so that the fine groove part 16 faces the substrate. The access opening part 20 on the mold 10 is filled with a solution composed of evaporation solvent and forming materials, the solution is introduced continuously into a space between the fine groove part 16 and the substrate by the access opening part 20, and the mold 10 is removed from the substrate after the solvent has evaporated. Thus, the fine body structure, which is formed from the forming materials after the evaporation of the solvent, which has the shape and dimension determined by the fine groove part 16 remains on the substrate.

公开(公告)号：JPH10190001A

公开(公告)日：1998-07-21

申请号：JP33139897

申请日：1997-12-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  DODABALAPUR ANANTH ,  FENG YI ,  RAJU VENKATARAM REDDY

IPC: C09K3/00 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To form an organic semiconductor layer by forming an active layer of organic material and permitting the layer to have a carrier mobility of a specific value or higher and a conductivity of a specific value or lower. SOLUTION: An active semiconductor layer is formed of organic polymer having a carrier mobility of approximately 10 cm /Vs or higher and a conductivity of approximately 10 s/cm or lower. An organic material active layer is composed of regioregular homopolymer (3-alkylthiophene). The alkyl group has at least 2-12 carbon atoms and is represented by a character R. Branched chains, such as isopropyl and isobutyl, and straight chain alkyl are the examples of the alkyl group. In the regioregular homopolymer of the 3-alkylthiophene monomer, the orientation of the alkl group of the thiophene part is regular in regard to the thiophene part which adjoins the polymer chain.

公开(公告)号：JP2003092411A

公开(公告)日：2003-03-28

申请号：JP2002201704

申请日：2002-07-10

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  SCHON JAN HENDRIK

IPC: H01L51/05 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a new organic field effect transistor (OFET). SOLUTION: The organic field effect transistor (OFET) has a gate, a source and a drain. The OFET has single layers of organic molecules formed between a gate electrode and a source electrode, a drain electrode. The single layers function as channels and a gate dielectric layer for the OFET.

公开(公告)号：JP2002310969A

公开(公告)日：2002-10-23

申请号：JP2002042898

申请日：2002-02-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  CRONE BRIAN KEITH ,  DODABALAPUR ANANTH ,  GELPERIN ALAN ,  KATZ HOWARD EDAN

IPC: G01N27/12 ,  G01N27/04 ,  G01N27/414 ,  G01N33/00

Abstract: PROBLEM TO BE SOLVED: To provide a modified electronic odor sensor. SOLUTION: The electronic odor sensor contains first and second amplifiers, a biasing network and a device so connected as to receive output signals from the first and second amplifiers. The device is so arranged as to correlate the output signals received to the presence or non-presence of the odor. The first and second amplifiers have first and second organic semiconductor layers respectively, and generate output signals responding to the electric conductivity of the respective organic semiconductor layers. The electric conductivity of the organic semiconductor layers corresponds to the existence of voltages or odors applied to those related among the amplifiers. The biasing network applies voltages to the amplifiers.

公开(公告)号：JP2001143873A

公开(公告)日：2001-05-25

申请号：JP2000270155

申请日：2000-09-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  CHEN XIAO LINDA

IPC: G02B5/30 ,  C09K11/06 ,  G02F1/1335 ,  G02F1/13357 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide a processing method which is simple and fast, can be applied to various organic and polymer materials for the polarized organic photonics device or the like, can obtain a membrane of a high optical quality and can achieve easily a thickness of several tens of nanometer. SOLUTION: Firstly, an alignment layer is formed on a first conductive layer. The first conductive layer acts as a first electrode in a photonics device. The alignment layer is usually a thin layer of an insulating electron transporting or hole transporting material and is deposited by a friction transferring method. The alignment layer aligns an organic layer or a polymer layer deposited later required for a polarized emitting and absorbing of light. Next, a conductive polymer is deposited on the alignment layer. Next, a photoactive material is deposited. Lastly, a second conductive layer is added to obtain the polarized organic photonics device. The second conductive layer acts as a second electrode in the photonics device.

公开(公告)号：JP2000029403A

公开(公告)日：2000-01-28

申请号：JP14899099

申请日：1999-05-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  DODABALAPUR ANANTH ,  KATZ HOWARD EDAN ,  RAJU VENKATARAM REDDY ,  ROGERS JOHN A

IPC: H01L29/786 ,  G09F9/30 ,  H01L27/15 ,  H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H05B33/14 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To obtain an economical and good efficient device by monolithically integrating thin-film transistors(TFTs) with light emitting diodes(LEDs) and forming active layers of the LEDs and the semiconductor layers of the TFTs of org. materials. SOLUTION: The monolithically integrated org. TFTs and org. LEDs 200 are formed by first depositing a conductive layer on transparent substrate 205. The layer acts both as the gate 215 of the electric field effect (TFT) (FET) 201 and the anode 216 of the LED 202. Next, a dielectric layer 220 of the FET 201 is formed. After the conductive layer and dielectric layer 220 are formed on the substrate 205, the source electrode 225 and drain electrode 226 of the FET 201 or the semiconductor material 230 of the FET is deposited. Since the semiconductor material 230 is not used as a hole transfer body, the layer of a hole transfer body 235 is formed in order to obtain necessary characteristics. An electron transfer body/emitter layer 240 is deposited on the hole transfer body 235 and in succession, a cathode 245 is deposited to complete the LED 202.

公开(公告)号：JP2003197901A

公开(公告)日：2003-07-11

申请号：JP2002268944

申请日：2002-09-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  FILAS ROBERT WILLIAM ,  HO PETER KIAN-HOON ,  SCHON JAN HENDRIK

IPC: B82B1/00 ,  H01L21/28 ,  H01L21/336 ,  H01L23/58 ,  H01L29/06 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To fabricate a miniature FET element. SOLUTION: The device comprises a first element, a second element, and a monolayer for blocking formation of the second element on the first element wherein the first and second elements are spaced apart by the length of the monolayer. More specifically, limitation of photolithographic technology is solved to enhance the switching rate and frequency response of an FET by decreasing the isolation distance between the drain electrode and the source electrode thereby decreasing the channel width. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH11251601A

公开(公告)日：1999-09-17

申请号：JP33315298

申请日：1998-11-24

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN

IPC: C07D487/22 ,  H01L29/786 ,  H01L33/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/42 ,  H01L51/50 ,  H01L31/04 ,  H01L51/00

Abstract: PROBLEM TO BE SOLVED: To achieve a high-electric field effect movement with low electrical conductance, by phthalocyanine where amorphous is doped by forming at least one six-member of the coordination compound of substitutional phthalocyanine and copper, zinc, tin, iron or hydrogen on an active layer with chlorine or a fluorine substituent. SOLUTION: To obtain desired on/off ratio in a semiconductor device, it is effective that the electric field effect mobility of phtyalocyanine is larger than 10 cm /Vs, and electrical conductance is 10 S/cm - approximately 10 /cm. In an MIS-FET-type transistor 20, a dielectric material layer 13 and a metal contact 15 are formed on a substrate 11. Silicon dioxide is formed on the substrate, operates as a gate dielectric material, and has a capacitance of approximately 10 nF/cm . Two separated gold contacts are formed on the dielectric layer. The film of a phthalocyanine blend compound 21 is formed on a gate dielectric layer 13 and contacts 17 and 19 being formed on the gate dielectric layer 13, thus achieving low electrical conductance and high-electric field effect mobility.